Carrier mobility and strain effect in heavily doped p-type Si

Romano, Lucia; Bastiani, R. De; Miccoli, Cristina; Bisognin, G.; Napolitani, E.; Salvador, D. De; Grimaldi, Maria Grazia

doi:10.1016/j.mseb.2006.08.009

Cited by 6 publications

(4 citation statements)

References 13 publications

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“…In the present study, possible effects of phonon confinement on the Ge–Ge Raman peak can be neglected according to the results of transmission electron microscope investigations, which ruled out the existence of Ge nanocrystalline regions or clusters . Concerning the lattice strain, this generally does not exceed a few tenths of percent in implanted and annealed samples, also in the case of high doping level . In support of this statement, high resolution x‐ray diffraction showed a lattice strain in our Al‐implanted Ge samples (not shown) lower than 0.03% in the entire depth range .…”

Section: Resultssupporting

confidence: 85%

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

Sanson

Giarola

Napolitani

et al. 2013

J Raman Spectroscopy

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The distribution profile of Al implanted in crystalline Ge has been investigated by micro-Raman spectroscopy. Using different excitation laser lines, corresponding to different optical penetration depths, the Al concentration at different depths beneath the sample surface has been studied. We have found a strong correlation between the intensity of the Al–Ge Raman peak at ~370 cm1, which is due to the local vibrational mode of substitutional Al atoms, and the carrier concentration profile, obtained by the spreading resistance profiling analysis. A similar connection has been also observed for both shape and position of the Ge–Ge Raman peak at ~300 cm1. According to these experimental findings, we propose here a fast and nondestructive method, based on micro-Raman spectroscopy under different excitation wavelengths, to estimate the carrier concentration profiles in Al-implanted Ge

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Section: Resultssupporting

confidence: 85%

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

Sanson

Giarola

Napolitani

et al. 2013

J Raman Spectroscopy

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“…15) Concerning the strain, implanted (and annealed) samples typically display a lattice strain lower than a few 0.1%, also in the case of high doping levels. 21,22) In all our Al-implanted Ge samples, high resolution X-ray diffraction showed a lattice strain profile (not reported here) lower than 0.03% in the whole depth range. 23) According to Peng et al, 20) a Ge lattice strain of this magnitude induces much smaller effects on the Ge-Ge Raman peak than those reported in Fig.…”

Section: Dymentioning

confidence: 53%

Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

Sanson

Napolitani

Giarola

et al. 2013

Appl. Phys. Express

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Al-implanted Ge samples were investigated by micro-Raman spectroscopy combined with a small angle beveling technique. By means of a reverse Monte Carlo procedure, the concentration profiles of the electrically active dopant ions were determined from the Raman peak observed at 370 cm-1 related to substitutional Al atoms. Furthermore, a clear relationship between the Ge–Ge Raman peak at 300 cm-1 and the active dopant concentration was also observed. This work shows that micro-Raman spectroscopy could be adopted for quantitative characterizations of the carrier concentration profiles in extrinsic semiconductors

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“…The structure of the interface between an insulator film and a semiconductor substrate is an important feature of devices, because the strain introduced into the substrate or defects at the interface may affect the carrier mobility [65]. Although most oxide films are made by dry oxidation at present, high pressure oxidation can be used to make thick oxide films at comparatively low temperatures.…”

Section: Interfacial Lattice Strain Of Sio 2 /Si(100) Formed By High ...mentioning

confidence: 99%

“…The the oxidation pressure and temperature were, the less stress was introduced. The strain may affect the carrier mobility [65] and the performance of LSI devices.…”

Section: Interfacial Lattice Strain Of Sio 2 /Si(100) Formed By High ...mentioning

confidence: 99%

Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction

Akimoto

Emoto

2010

J. Phys.: Condens. Matter

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Strain can reduce carrier mobility and the reliability of electronic devices and affect the growth mode of thin films and the stability of nanometer-scale crystals. To control lattice strain, a technique for measuring the minute lattice strain at surfaces and interfaces is needed. Recently, an extremely asymmetric x-ray diffraction method has been developed for this purpose. By employing Darwin's dynamical x-ray diffraction theory, quantitative evaluation of strain at surfaces and interfaces becomes possible. In this paper, we review our quantitative strain analysis studies on native SiO(2)/Si interfaces, reconstructed Si surfaces, Ni/Si(111)-H interfaces, sputtered III-V compound semiconductor surfaces, high-k/Si interfaces, and Au ion-implanted Si.

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Carrier mobility and strain effect in heavily doped p-type Si

Cited by 6 publications

References 13 publications

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

Study of carrier concentration profiles in Al‐implanted Ge by micro‐Raman spectroscopy under different excitation wavelengths

Non-Conventional Characterization of Electrically Active Dopant Profiles in Al-Implanted Ge by Depth-Resolved Micro-Raman Spectroscopy

Quantitative strain analysis of surfaces and interfaces using extremely asymmetric x-ray diffraction

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