Carrier Profiling of a Heterojunction Bipolar Transistor and p–i–n Photodiode Structures by Electrochemical C–V Technique

Kinder, R.; Nemcsics, Ákos; Harman, R.; Riesz, Ferenc; Pécz, B.

doi:10.1002/(sici)1521-396x(199910)175:2<631::aid-pssa631>3.0.co;2-v

Cited by 10 publications

(5 citation statements)

References 4 publications

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“…This explanation would be consistent with earlier observations on Al x Ga 1Ϫx As which revealed that the etch rate remained low and the crater became very rough at high Al contents. 4 It seems, therefore, that roughening is an inherent property of most of electrolyte/III-V Al-containing semiconductor barriers. 16 The surface defect density ͑etch pit density͒ in the as-grown samples was less than 10 3 cm Ϫ2 , and at the bottom of the crater less than 10 6 cm Ϫ2 .…”

Section: Resultsmentioning

confidence: 99%

“…Calibration for E-CV profiling.-It is well known, 1,4 that no universal etchant for the E-CV profiling of Al x Ga 1Ϫx As can be proposed. Usually three electrolytes are employed: 0.2 M NaOH:ethylenediaminetetraacetic acid ͑EDTA͒ (pH Ϸ 12), 1 vol % solution of 38% HCl:methanol (pH Ϸ 0.5), and 0.1 M solution of C 6 H 2 (OH) 2 (SO 3 Na) 2 ͑pH 4.9͒.…”

Section: Methodsmentioning

confidence: 99%

“…2 Despite its wide use, E-CV poses problems when determining impurity concentrations in a sample whose layer thickness is comparable to the Debye length, or, if the sample consists of several layers, or, if the sample is heavily doped and deposited onto a semi-insulating substrate. 3,4 There are important differences between semiconductor/ electrolyte interface and Schottky contact. [5][6][7] The charge transfer through the semiconductor/liquid interface is supported by an electrochemical process.…”

mentioning

confidence: 99%

“…The exception is Ref. 4 where E-CV is used to determine the distribution of beryllium atoms in Al 0.34 Ga 0.66 As and the distribution of silicon in Al 0.47 Ga 0.53 As.…”

mentioning

confidence: 99%

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Carrier Profiling and Crystal Quality Evaluation of Thin Al[sub x]Ga[sub 1−x]As (0.22<x<0.86) Films by Electrochemical Capacitance/Voltage Technique

Fedorenko

Jouhti

Konttinen

et al. 2003

J. Electrochem. Soc.

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We have applied an electrochemical capacitance/voltage method to determine doping profiles and material quality of n-type Al x Ga 1Ϫx As:Si heterostructures with x ranging from 0.24 to 0.86 in a single measurement step. It was found that the etching rate of the high content Al samples is low and the resulting surfaces are rough, independent of the etchant used. Though surface roughing is associated with an inherent property of Al x Ga 1Ϫx As, the doping depth profile can be determined in an accurate way. On the basis of secondary ion mass spectroscopy, Hall effect, and electrochemical capacitance/voltage measurements the total donor concentration could be estimated.Knowledge of impurity distribution in semiconductor heterostructures is important for understanding the operation of microelectronic devices. It is straightforward to measure unintentionally doped samples, because the doping concentration can be determined by a simple capacitance/voltage ͑CV͒ method that employs a Schottky contact. 1 An electrochemical capacitance/voltage ͑E-CV͒ technique has advantages in comparison with conventional C-V methods, because of its capability to measure spatial ionized impurity distribution to practically unlimited depth, not being limited by the breakdown at high doping level. 2 Despite its wide use, E-CV poses problems when determining impurity concentrations in a sample whose layer thickness is comparable to the Debye length, or, if the sample consists of several layers, or, if the sample is heavily doped and deposited onto a semi-insulating substrate. 3,4 There are important differences between semiconductor/ electrolyte interface and Schottky contact. 5-7 The charge transfer through the semiconductor/liquid interface is supported by an electrochemical process. The applied potential at electrolyte/ semiconductor interface drops not only across the semiconductor space charge layer, but, partly, across the much thinner Helmholtz double layer on the electrolyte side of the interface. Under reverse bias, the space charge region of the semiconductor is depleted by majority carriers, and only ionized impurities contribute to the space charge capacity, C sc , which is much smaller than the capacity of Helmholz layer. The C sc yields the free carrier concentration (n 0 ) in the space charge region. The extrapolation of the Mott-Schottky curve 1/C 2 (V) to 1/C 2 ϭ 0 gives the flatband potential (V fb ). When the E-CV method is employed in the measurements of n 0 , it is generally suggested that the flatband potential is constant during the profile. In practice the Mott-Schottky curves show frequency dependence which can affect the determination of the flatband potential and the free carrier concentration. The frequency dispersion of the impedance could be assigned to microroughness of the electrode surface and was found to decrease with the conductivity of the electrolyte. 8 The dipole relaxation phenomena in the space charge layer of the semiconductor electrode may also create frequency dependence of capacitance. 9 Studies of...

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Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

mentioning

confidence: 99%

“…The exception is Ref. 4 where E-CV is used to determine the distribution of beryllium atoms in Al 0.34 Ga 0.66 As and the distribution of silicon in Al 0.47 Ga 0.53 As.…”

mentioning

confidence: 99%

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Carrier Profiling and Crystal Quality Evaluation of Thin Al[sub x]Ga[sub 1−x]As (0.22<x<0.86) Films by Electrochemical Capacitance/Voltage Technique

Fedorenko

Jouhti

Konttinen

et al. 2003

J. Electrochem. Soc.

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show abstract

“…However, the proper estimation of the impurity profile still remains as a main problem especially for p-i-n optoelectronic devices. Several experimental techniques have been used for the display of the doping profile in a material, among these secondary ion mass spectroscopy (SIMS), spreading resistance profiling (SPR) [4][5][6], C-V [7][8][9] are widely used. In addition, data about electrically active defects are deduced from deep level transient (DLTS) [10] and admittance spectroscopy (AS) [11] techniques.…”

Section: Introductionmentioning

confidence: 99%

Photocapacitance study at p–i–n photodiode by numerical C–V integration

Kavasoğlu

Oktik

2009

Solid-State Electronics

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The investigation on the front surface field of aluminum rear emitter N-type silicon solar cells

Chen²,

Zhang³

et al. 2015

Solar Energy

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Carrier Profiling of a Heterojunction Bipolar Transistor and p–i–n Photodiode Structures by Electrochemical C–V Technique

Cited by 10 publications

References 4 publications

Carrier Profiling and Crystal Quality Evaluation of Thin Al[sub x]Ga[sub 1−x]As (0.22<x<0.86) Films by Electrochemical Capacitance/Voltage Technique

Carrier Profiling and Crystal Quality Evaluation of Thin Al[sub x]Ga[sub 1−x]As (0.22<x<0.86) Films by Electrochemical Capacitance/Voltage Technique

Photocapacitance study at p–i–n photodiode by numerical C–V integration

The investigation on the front surface field of aluminum rear emitter N-type silicon solar cells

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