Carrier recombination dynamics in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>In</mml:mtext></mml:mrow><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mrow><mml:mtext>Ga</mml:mtext></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mtext>N</mml:mtext><mml:mo>/</mml:mo><mml:mtext>GaN</mml:mtext></mml:mrow></mml:math>multiple quantum wells

Brosseau, Colin-N.; Perrin, Mathieu; Silva, Carlos J. R.; Leonelli, R.

doi:10.1103/physrevb.82.085305

Cited by 51 publications

(44 citation statements)

References 34 publications

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“…As the peak carrier density per pulse per QW was increased beyond this figure, the PL FWHM also increased up to the values of 178 meV for non-polar sample and 106 meV for the polar sample. The behaviour of the c-plane spectra is similar to that reported previously in the work by Brosseau et al, 37 Sun et al, 38 and Davies et al 39 In particular, in the work of Davies et al, the increase in PL FWHM was correlated with the onset of droop and was interpreted as being due to an extra emission component involving delocalised carriers.…”

supporting

confidence: 74%

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Davies

Dawson

Hammersley

et al. 2016

Applied Physics Letters

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We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 1011 cm−2 pulse−1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

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supporting

confidence: 74%

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Davies

Dawson

Hammersley

et al. 2016

Applied Physics Letters

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“…First, in polar (In,Ga)N QWs the decay occurs over a much longer time scale due to the polarization field perpendicular to the plane of the QWs [45,[47][48][49]. Second, the decay curves are nonexponential due to the variable in-plane separation of the separately localized electrons and holes [46,49].…”

Section: B Experimental Results: Optical Characterizationmentioning

confidence: 99%

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

Schulz¹,

Tanner

O’Reilly

et al. 2015

Phys. Rev. B

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In this paper we present a detailed analysis of the structural, electronic, and optical properties of an m-plane (In,Ga)N/GaN quantum well structure grown by metal organic vapor phase epitaxy. The sample has been structurally characterized by x-ray diffraction, scanning transmission electron microscopy, and 3D atom probe tomography. The optical properties of the sample have been studied by photoluminescence (PL), time-resolved PL spectroscopy, and polarized PL excitation spectroscopy. The PL spectrum consisted of a very broad PL line with a high degree of optical linear polarization. To understand the optical properties we have performed atomistic tight-binding calculations, and based on our initial atom probe tomography data, the model includes the effects of strain and built-in field variations arising from random alloy fluctuations. Furthermore, we included Coulomb effects in the calculations. Our microscopic theoretical description reveals strong hole wave function localization effects due to random alloy fluctuations, resulting in strong variations in ground state energies and consequently the corresponding transition energies. This is consistent with the experimentally observed broad PL peak. Furthermore, when including Coulomb contributions in the calculations we find strong exciton localization effects which explain the form of the PL decay transients. Additionally, the theoretical results confirm the experimentally observed high degree of optical linear polarization. Overall, the theoretical data are in very good agreement with the experimental findings, highlighting the strong impact of the microscopic alloy structure on the optoelectronic properties of these systems.

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“…We therefore use the time (s e ) required for the PL intensity to decay by a factor of 1=e from the maximum intensity to characterise each decay transient. The low temperature PL decay times of InGaN/GaN QWs are also reported 28,30,[41][42][43][44] to vary at different detection energies across the zero phonon line, with an increase in decay time as the detection energy is reduced. This effect has been explained as follows: as the detection energy is reduced, we detect carriers that are localised in regions of progressively increasing In fraction where the local built-in electric field is stronger, thus leading to a reduction in electron-hole wavefunction overlap.…”

Section: -4mentioning

confidence: 92%

“…In general, the low temperature (10 K) PL decay transients measured from InGaN/GaN QWs are non-exponential. 20,28,[40][41][42] This nonexponential nature is attributed to variations in the in-plane overlap of the electron and hole wavefunctions 28 and so a single time constant cannot be used to define the entire decay curves. Examples of the decays curves from samples A and B are shown in Fig.…”

Section: -4mentioning

confidence: 99%

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

Davies

Hammersley

Massabuau

et al. 2016

Journal of Applied Physics

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In this paper, we report on a detailed spectroscopic study of the optical properties of InGaN/GaN multiple quantum well structures, both with and without a Si-doped InGaN prelayer. In photoluminescence and photoluminescence excitation spectroscopy, a 2nd emission band, occurring at a higher energy, was identified in the spectrum of the multiple quantum well structure containing the InGaN prelayer, originating from the first quantum well in the stack. Band structure calculations revealed that a reduction in the resultant electric field occurred in the quantum well immediately adjacent to the InGaN prelayer, therefore leading to a reduction in the strength of the quantum confined Stark effect in this quantum well. The partial suppression of the quantum confined Stark effect in this quantum well led to a modified (higher) emission energy and increased radiative recombination rate. Therefore, we ascribed the origin of the high energy emission band to recombination from the 1st quantum well in the structure. Study of the temperature dependent recombination dynamics of both samples showed that the decay time measured across the spectrum was strongly influenced by the 1st quantum well in the stack (in the sample containing the prelayer) leading to a shorter average room temperature lifetime in this sample. The room temperature internal quantum efficiency of the prelayer containing sample was found to be higher than the reference sample (36% compared to 25%) which was thus attributed to the faster radiative recombination rate of the 1st quantum well providing a recombination pathway that is more competitive with nonradiative recombination processes.

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Carrier recombination dynamics inInxGa1−xN/GaNmultiple quantum wells

Cited by 51 publications

References 34 publications

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Structural, electronic, and optical properties ofm-plane InGaN/GaN quantum wells: Insights from experiment and atomistic theory

A comparison of the optical properties of InGaN/GaN multiple quantum well structures grown with and without Si-doped InGaN prelayers

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