Carrier scattering approach to the origins of dark current in mid- and far-infrared (terahertz) quantum-well intersubband photodetectors (QWLPs)

Etteh, N.E.I.; Harrison, P.

doi:10.1109/3.918580

Cited by 36 publications

(28 citation statements)

References 12 publications

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“…15 However, in order to improve the predictive qualities, it is desirable to quantify that model and also to include the contribution of field induced emission. To achieve this, consider discretizing the continuum as in Fig.…”

Section: Theoretical Approach and Methodsmentioning

confidence: 99%

“…However, for a more accurate prediction of the dark current in QWIPs, a quantitative microscopic model is necessary. 12,14,15 In a previous work, 15 quantum mechanical calculations of the dark current focused on the sequential tunnelling component. Recently reported new approaches to the thermionic emission component have been limited to qualitative predictions with a simple model.…”

Section: Introductionmentioning

confidence: 99%

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Quantum mechanical scattering investigation of the thermionic and field induced emission components of the dark current in quantum well infrared photodetectors

Etteh

Harrison

2002

Journal of Applied Physics

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The thermionic emission and field induced emission components of the dark current in quantum well infrared photodetectors are investigated using a quantum mechanical scattering theory approach. Calculations are performed for an experimentally reported device. Using this as a standard, the device dimensions were altered in order to increase its detection wavelength to cover the mid-͑MIR͒ and far-infrared ͑FIR͒ regions of the spectrum. The behavior of the scattering mechanisms that contribute to the thermionic emission and field induced emission components were studied. The results highlight the change in the dominating scattering mediator across the MIR and FIR bands.

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Section: Theoretical Approach and Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Quantum mechanical scattering investigation of the thermionic and field induced emission components of the dark current in quantum well infrared photodetectors

Etteh

Harrison

2002

Journal of Applied Physics

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“…Figure 1 shows the detailed band structure and energy levels of the system. Lower level 0 and upper level 1 are conducting band levels of QW 1 [45,46] which represents the interaction of the probe laser field, terahertz radiation and incoherent pumping field with the double coupled QWs system, can be expressed in the form of…”

Section: Model and Equations Of Motionmentioning

confidence: 99%

“…It is known that the absorption and the dispersion properties of a weak probe field can be modified effectively by atomic coherence and quantum interference [1][2][3][4][5][6]. Atomic coherence can be achieved by the strong coupling fields, the spontaneous emission and incoherent pumping fields.…”

Section: Introductionmentioning

confidence: 99%

Role of Terahertz Radiation on Optical Properties of Laser Pulse in a Double Coupled Quantum Well Nanostructure

Shiri¹,

Malakzadeh²

2017

J Laser Opt Photonics

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The transient and steady-state behavior of the absorption and the dispersion of a probe pulse laser field propagating through an InGaAs\InP double coupled quantum well are studied. The effect of terahertz radiation excitation, electron tunnelling and incoherent pumping on the optical properties of the probe field is discussed. In the terahertz (30~300 µm or 1~10 THz) intersubband transition, the incoming photon energy is (4~41 mev) and maybe in the order of electron thermal broadening (KT~6 meV-25 meV for 77 K-300 K). Therefore in the conventional structure, the incoming photon can directly excite the ground state electrons to higher energy levels and this process inhabits the correct optical switching in terahertz applications. We show that the group velocity of a light pulse can be controlled from superluminal to subluminal or vice versa by controlling the rates of incoherent pumping field and tunnelling between the quantum wells. The required switching time is calculated and we find it between 3 to 26 picoseconds.

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“…These band-gap modifications are a result of both the presence of strain induced in the SiGe and the presence of quantum confinement ability. The ability to modify the band-structure by alloying, strain effects and quantum confinement promises great potential for Si optoelectronics where devices can be designed to operate in the mid to far infra-red [6,7].…”

Section: Introductionmentioning

confidence: 99%

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition

Iamraksa

Lloyd²,

Bagnall

2007

J Mater Sci: Mater Electron

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Near-infrared photodetectors have been fabricated using standard CMOS processes in conjunction with the multilayer growth of Si/SiGe 0.06 using low-pressure chemical vapor deposition (LPCVD). Cross-section scanning electron microscopy (SEM) indicates the existence of quantum dot like corrugations in devices with particularly thick SiGe 0.06 quantum wells. With an accumulation of germanium atoms at the crest of such features and commensurate high germanium concentration we see a considerable enhancement of the long wavelength detection sensitivity of photodetectors in the range 1100-1300 nm. By fitting experimental data the minimum energy gap of the structure is found to be 0.88 eV corresponding to a germanium concentration of around 15%.

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Carrier scattering approach to the origins of dark current in mid- and far-infrared (terahertz) quantum-well intersubband photodetectors (QWLPs)

Cited by 36 publications

References 12 publications

Quantum mechanical scattering investigation of the thermionic and field induced emission components of the dark current in quantum well infrared photodetectors

Quantum mechanical scattering investigation of the thermionic and field induced emission components of the dark current in quantum well infrared photodetectors

Role of Terahertz Radiation on Optical Properties of Laser Pulse in a Double Coupled Quantum Well Nanostructure

Si/SiGe near-infrared photodetectors grown using low pressure chemical vapour deposition

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