Carrier transport in a position sensitive detector based on an ITO/a-Si:H/Pd structure

Nedev, N.; Georgiev, S.; Sueva, D.; Smirnov, N.; Toneva, A.

doi:10.1016/s0924-4247(01)00625-2

Cited by 12 publications

(2 citation statements)

References 7 publications

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“…Some of the areas reported are very large, around 5 mm × 80 mm [1,2] though the sensitivity tends to be quite low, being of the order of 1-2 mV mm −1 . This amorphous material shows promising results [3][4][5][6][7] although it is yet to be adopted as a commercial technology. While the prospects for commercial a-Si : H PSDs are very good due to the cheaper base material, Schottky barrier crystalline devices have an advantage over amorphous silicon devices of having simpler fabrication techniques and faster response times.…”

Section: Introductionmentioning

confidence: 99%

Improved position sensitive detectors using high resistivity substrates

Henry¹,

Livingstone²

2008

J. Phys. D: Appl. Phys.

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Position sensitive detectors (PSDs) have the advantage of being single continuous devices with no dead zones unlike other types of optical sensors that must be arrayed to produce large area devices. An important aspect of using PSDs is the simplicity of implementing the devices in most applications, i.e. there is no requirement for additional electronics to read electronic output or for obtaining information over large areas. To this end it is advantageous for devices to produce large sensitivities and which can be fabricated using simple, reproducible techniques. This paper will report on a series of Schottky barrier crystalline silicon devices which display markedly higher sensitivities compared with those studied in most other research work now being concentrated on PECVD amorphous silicon structures. In this work, results from devices fabricated from substrates with a range of resistivities and various Schottky metals are presented. Some of the sensitivity measurements obtained were better than 25 mV mm−1, among some of the best sensitivities reported for Schottky barrier crystalline PSDs. These results were obtained alongside excellent linearities. Devices were also tested under a range of light beams including very low light levels of broadband white light ranging from 0.1 up to 10 mW.

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Section: Introductionmentioning

confidence: 99%

Improved position sensitive detectors using high resistivity substrates

Henry¹,

Livingstone²

2008

J. Phys. D: Appl. Phys.

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“…Thin amorphous silicon (a-Si) is actively studied and used as the photosensitive layer in large area optical position-sensitive detectors [1][2][3]. Recently Hall sensors based on poly-Si suitable for usage in large area sensors have been also fabricated and studied [4].…”

Section: Introductionmentioning

confidence: 99%

Influence of the Rapid Thermal Annealing on the Properties of Thin a-Si Films

Nedev

Beshkov

Fortunato

et al. 2004

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The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200 o C for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.All rights reserved. No part of contents of this paper may be reproduced or transmitted in any form or by any means without the written permission of Trans Tech Publications Ltd, www.scientific.net. (Scite.

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