Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

Ran, Guangzhao; You, Long; Dai, Linjie; Liu, Y.L; Lv, Yitao; Chen, X.S; Qin, G. G.

doi:10.1016/j.cplett.2003.11.069

Cited by 31 publications

(11 citation statements)

References 22 publications

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“…Therefore, the SiOxNWs formation and their PL spectra were strongly dependent on the growth conditions. The similar PL spectrum of SiOxNWs has been previously reported showing the blue emission with a peak position in the range of 414e 470 nm [12,16,22,23] and this was described by neutral oxygen vacancy or oxygen deficiency-related defects. Ultraviolet light emission at w350 nm was observed in oxidized porous silicon and annealed SiOx [24] and the spectra were also different from that of Si NWs with a silicon oxide shell [25].…”

Section: Resultssupporting

confidence: 63%

Synthesis and characterization of amorphous silicon oxide nanowires embedded with Ni nanoparticles

Jang

Lee

Cho

et al. 2013

Materials Chemistry and Physics

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Section: Resultssupporting

confidence: 63%

Synthesis and characterization of amorphous silicon oxide nanowires embedded with Ni nanoparticles

Jang

Lee

Cho

et al. 2013

Materials Chemistry and Physics

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“…A similar experiment has been reported by Ran et al [24], in which crystalline Si 3 N 4 /amorphous SiO 2 nanocables were synthesized on silicon substrates under N 2 atmosphere at 1250 • C without using catalyst and H 2 . We believe that the difference is due to the different atmosphere and the temperature control curve.…”

Section: Growth Mechanismsupporting

confidence: 73%

Metal‐Catalyst‐Free Synthesis and Characterization of Single‐Crystalline Silicon Oxynitride Nanowires

Shi

et al. 2012

Journal of Nanomaterials

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Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

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“…The main synthesis method is carbothermal reduction and nitridation of a mixture containing silicon oxide [4][5][6], although other techniques are also applied: combustion synthesis [7,8], carbon-nanotube-confined chemical reaction [9,10], catalyst and catalystless reactions of silicon with nitrogen [11,12], reaction of silicon and silicon oxide with ammonia [13][14][15], chemical vapor deposition (CVD) [16] and reaction of liquid silicon with nitrogen [17]. The process known as oxide-assisted catalyst-free synthesis is one of the most promising because of its simplicity and high yield [14,18]. Si, SiO 2 , SiC and metal oxide nanowires have also been grown by this method [14,[19][20][21].…”

Section: Introductionmentioning

confidence: 99%

Kinetic study of the oxide‐assisted catalyst‐free synthesis of silicon nitride nanowires

Farjas

Pinyol

Rath

et al. 2006

Physica Status Solidi (a)

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The synthesis of Si 3 N 4 nanowires from the reaction of silicon nanoparticles with N 2 in the 1200-1440ºC temperature range is reported. The nitridation conditions are such that the reaction with nitrogen is favoured by the presence of silicon oxide in the particles and by the active oxidation of silicon without a catalyst. It is shown that the Si to Si 3 N 4 conversion rate depends on the amount of silicon particles used in the experiments and that, in general, the reaction slows down for greater amounts. This trend is explained by particle stacking, which restricts the exchange of gases between the furnace atmosphere and the atmosphere around the inner particles. In a first stage, local oxygen partial pressure increases around the inner particles and inhibits nitridation locally. If the amount of reactant Si nanoparticles is small enough, this extrinsic effect is avoided and the intrinsic nitridation kinetics can be measured.Experiments show that intrinsic kinetics does not depend on temperature.

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Catalystless synthesis of crystalline Si3N4/amorphous SiO2 nanocables from silicon substrates and N2

Cited by 31 publications

References 22 publications

Synthesis and characterization of amorphous silicon oxide nanowires embedded with Ni nanoparticles

Synthesis and characterization of amorphous silicon oxide nanowires embedded with Ni nanoparticles

Metal‐Catalyst‐Free Synthesis and Characterization of Single‐Crystalline Silicon Oxynitride Nanowires

Kinetic study of the oxide‐assisted catalyst‐free synthesis of silicon nitride nanowires

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