Cathodoluminescence of wet, dry, and hydrogen-implanted silica films

Fitting, H.‐J.; Ziems, T.; Salh, Roushdey; Zamoryanskaya, M. V.; Kolesnikova, K.V.; Schmidt, Bernd; Czarnowski, A. von

doi:10.1016/j.jnoncrysol.2005.06.017

Cited by 26 publications

(26 citation statements)

References 30 publications

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“…2 (top left). Besides the main silica luminescence bands: red (R) (650 nm, 1.9 eV), blue (B) (460 nm, 2.7 eV), and UV (290 nm, 4.3 eV) we recognize a yellow band (Y) (570 nm, 2.18 eV) appearing and increasing at RT after a longer time of irradiation especially in wet oxide [16]. An additional luminescence band can be distinguished in wet oxide silica layer at around 500 nm (2.48 eV).…”

Section: Cathodoluminescence Of Non-implanted Dry and Wet Silicamentioning

confidence: 80%

How to make silica luminescent?

Fitting

2009

Journal of Luminescence

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Section: Cathodoluminescence Of Non-implanted Dry and Wet Silicamentioning

confidence: 80%

How to make silica luminescent?

Fitting

2009

Journal of Luminescence

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“…3. The formation of oxygen deficient centers or even higher silicon aggregates by means of electron beam irradiation has been manifested already earlier, see e. g. [7,12,13]. Even Auger electron spectroscopy has clearly evidenced that oxygen is dissociated from SiO 2 due to electronic or thermal processes during electron beam excitation, see e. g. [14].…”

Section: Resultsmentioning

confidence: 97%

Si and Ge nanocluster formation in silica matrix

et al. 2007

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High resolution transmission electron microscopy, scanning transmission electron microscopy and cathodoluminescence have been used to investigate Si and Ge cluster formation in amorphous silicon dioxide layers. Commonly, cathodoluminescence emission spectra of pure SiO 2 are identified with particular defect centers within the atomic network of silica including the nonbridging oxygen hole center associated with the red luminescence at 650 nm (1.9 eV) and the oxygen deficient centers with the blue (460 nm; 2.7 eV) and ultraviolet band (295 nm; 4.2 eV). In Ge + ion implanted SiO 2 an additional violet emission band appears at 410 nm (3.1 eV). The strong increase of this violet luminescence after thermal annealing is associated with formation of low-dimension Ge aggregates like dimers, trimers and higher formations, further growing to Ge nanoclusters. On the other hand, pure silica layers were modified by heavy electron beam irradiation (5 keV; 2.7 A/cm 2 ) leading to electronic as well as thermal dissociation of oxygen and appearance of under-stoichiometric SiOx . This SiOx will undergo a phase separation and we observe Si cluster formation with a most probable cluster diameter of 4 nm. Such largely extended Si clusters will diminish the SiO 2 related luminescence and Si crystal related luminescence in the near IR appears.

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“…They can occur both at a regular site (Si-O) with the simultaneous generation of the E 0 center ("Si Å ), and at a precursor such as O-H and O-O bonds [10][11][12][13]. Moreover, the NBOHC growth is also affected by their conversion due to reaction with mobile species (H, O and their compounds) [14][15][16]. The interplay of the generation processes and chemical reactions influence the stability of NBOHC so making difficult the understanding of the growth curves with irradiation dose.…”

Section: Introductionmentioning

confidence: 99%