This work presents characterization of focused ion beam induced deposition (FIBID) of platinum using both rubidium and gallium ions. Trimethylplatinum [(MeCp)Pt(Me)3] was used as the deposition precursor. Under similar beam energies, 8.5 keV for Rb+ and 8.0 keV for Ga+, and beam current, near 10 pA, the two ion species deposited Pt films at 0.90 and 0.73 μm3/nC, respectively. Energy-dispersive x-ray spectroscopy shows that Rb+ FIBID-Pt consists of similar Pt contents (49% for Rb+ FIBID and 37% for Ga+ FIBID) with much lower primary ion contents (5% Rb and 27% Ga) than Ga+ FIBID-Pt. The deposited material was also measured to have a resistivity of 8.1×104 μΩcm for the Rb+ FIBID-Pt and 5.7×103 μΩcm for Ga+ FIBID-Pt.