CCD Readout of infrared hybrid focal-plane arrays

Felix, P.; Moulin, Michèle; Munier, B.; Portmann, J.; Reboul, J. P.

doi:10.1109/t-ed.1980.19837

Cited by 28 publications

(5 citation statements)

References 13 publications

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“…For an ideal system, with increasing the voltage V G , when the injection efficiency h I nearly rea− ches unity, for the readout−integrated current we have I In »I ph , and the value of D*, limited by the photodiode current noise Q 3 , coincides with the theoretical limit of detectivity in BLIP operation (D BLIP * ). In the latter case, the characterristics of IR FPAs based on DI readout circuits can be evaluated using the generally accepted simplifications [2,3]. For multi−element IR FPAs, it is significant that the detectivity D* and the current I In at V G > 1.22 V are almost independent of V G .…”

Section: Inmentioning

confidence: 99%

“…In the pre− sent study, these dependences were calculated using the maximum values of D * (V G ). For multi−element IR FPAs, because of the technology−defined scatter of threshold volt− ages under the input gates of readouts, one fails to ensure the biasing of photodiodes with optimal voltages [2,19]. The non−uniformity of threshold voltages gives rise to a residual fixed−pattern noise (RFPN) and, for some portion of photodetector channels in IR FPA, to a considerable reduc− tion of D * and NETD figures, which can be even more dra− matic than that in Figs.…”

Section: Calculated Characteristics Of Ir Fpasmentioning

confidence: 99%

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Infrared photodetectors based on the system “Hg1−xCdxTe photodiode — direct-injection readout circuit”

Gumenjuk-Sichevska

Karnaushenko

Lee

et al. 2011

Opto-Electronics Review

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Section: Inmentioning

confidence: 99%

Section: Calculated Characteristics Of Ir Fpasmentioning

confidence: 99%

Infrared photodetectors based on the system “Hg1−xCdxTe photodiode — direct-injection readout circuit”

Gumenjuk-Sichevska

Karnaushenko

Lee

et al. 2011

Opto-Electronics Review

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show abstract

“…Charge collection in direct injection [13] and buffered direct injection [14,15] topology is carried out at the drain of the inject MOS transistor. The direct injection approach has the advantage of simplicity and high injection efficiencies.…”

Section: Adaptation and Charge Collectionmentioning

confidence: 99%

Study on infrared detection data read out technologies

Yongquan

Bi³

2011

SPIE Proceedings

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Read out circuit is a critical component needed for infrared and visible light imaging system. Advances in image sensors and microelectronics have led to the development of digital read out fabricated using deep sub micro integrated circuit techniques. An brief review is given of the image sensor developing. Major adaptation circuit are review including source follower, direct injection, and capacitance trans impedance amplifier. On chip analog signal processing and analog to digital conversion techniques are also discussed. Noise shaping modulation is a promising technique to build a low power, ultra small area, high precision pixel level AD convertor.

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“…The injection efficiency is approximately given by 21,22 ͑is this only true for direct injection ROIC?͒…”

Section: Comparison Of Qdips and Hgcdte Devicesmentioning

confidence: 99%

Assessment of quantum dot infrared photodetectors for high temperature operation

Martyniuk

Krishna

Rogalski

2008

Journal of Applied Physics

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Investigation of the performance of quantum dot infrared photodetectors ͑QDIPs͒ in comparison to other types of infrared photodetectors operated near room temperature is presented. The model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active region. Theoretical estimations provide evidence that the QDIP is suitable for noncryogenic operation especially in long-wavelength infrared region, where conventional HgCdTe photodiodes are not viable. Hence it is expected that improvement in technology and design of QDIP detectors will make it useful for practical application. The higher operating speed of QDIP and multispectral capability are considerable advantages in comparison with thermal detectors. Comparison of theoretically predicted and experimental data indicates that, as so far, the QDIP devices have not demonstrated their potential advantages and are expected to posses the fundamental ability to achieve higher detector performance. Poor QDIP performance is generally linked to nonoptimal band structure and control over the QDs size and density.

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CCD Readout of infrared hybrid focal-plane arrays

Cited by 28 publications

References 13 publications

Infrared photodetectors based on the system “Hg1−xCdxTe photodiode — direct-injection readout circuit”

Infrared photodetectors based on the system “Hg1−xCdxTe photodiode — direct-injection readout circuit”

Study on infrared detection data read out technologies

Assessment of quantum dot infrared photodetectors for high temperature operation

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