CFD Study on Polycrystalline Silicon Chemical Vapor Deposition in a Rib Reactor

The chemical vapor deposition chamber design to improve the thin film deposition quality in both 12″ (300 mm) and 18″ (450 mm) wafers with the development of 3D chamber modeling and experimental visual technique

“…5 shows that the eVD chamber with the type A inlet layout design also has the more similar deposition characteristics during the wafer size migration between 12" (300 mm) and 18" (450 mm) than other kinds of the inlet designs with the same process condition. It indicates that the Ie manufacturer do not need to change the process recipe a lot in this kind of the chamber inlet design when the industry expands the wafer size for the cost reduction In order to effectively understand the characteristics of deposition in the eVD chamber theoretically, Nusselt (Nu) number, which is a dimensionless number, defined as the convective heat transfer divided by conductive heat transfer in the boundary layer, is used to predict the general trend of the deposition rate [13]. The definition of Nu is shown as below:…”