Chalcogen based treatment of InAs with [(NH4)2S/(NH4)2SO4]

Eassa, N.; Murape, D.M.; Neethling, J.H.; Betz, Richard; Coetsee, E.; Swart, H.C.; Venter, A.; Botha, J.R.

doi:10.1016/j.susc.2011.02.020

Cited by 7 publications

(6 citation statements)

References 17 publications

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“…30 As for S atoms, they mainly exist as the forms of S 2− , S − , S-C bonding and SO x-. 31,32 The S 2− corresponds well with the FeS structure shown in XRD and TEM results. The S − and SO xcould result from few amorphous FeS 2 and very few oxidized sulfur structures.…”

Section: Resultssupporting

confidence: 76%

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Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na ⁺ and K ⁺

Wang

Cao

et al. 2020

Int J Energy Res

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Summary Ferrous sulfides have high theoretical capacity in the electrochemical storage of Na‐ion and K‐ion, but its obvious volume change during the storage process greatly affects its cycling performance at high current density. In this regard, we construct a unique composites structure of Nitrogen‐doped carbon shell coated FeS nanoparticle with inner void spaces. As an anode in Na‐ion and K‐ion batteries, this structure could provide excellent cycling performance at high rate of charge/discharge process (560 mAh/g at 0.5 A/g for 300 cycles in Na‐ion battery and 322 mAh/g at 1 A/g for 300 cycles in K‐ion battery). Further research finds the inner void space could not only provide buffer space for the volume change of FeS nanoparticles, but also maintain a stable outer carbon shell during the electrochemical process. These behaviors greatly promote the reversibility of FeS at high rate charge transfer process. Consequently, the construction of inner void space in graphitized carbon shell in this work could be considered as an important reference for the promotion of electrochemical storage in other transitional metal compound system.

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Section: Resultssupporting

confidence: 76%

“…Figure 3D indicates most of Fe atoms in the sample are Fe 2+ 30 . As for S atoms, they mainly exist as the forms of S 2− , S − , S–C bonding and SO x‐ 31,32 . The S 2− corresponds well with the FeS structure shown in XRD and TEM results.…”

Section: Resultsmentioning

confidence: 64%

Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na ⁺ and K ⁺

Wang

Cao

et al. 2020

Int J Energy Res

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“…Compared to the single NW device (Figure ), the average current level of each NW gets degraded, which could be attributed to different NW-to-NW gate coupling due to the misalignment and broken wires in the channel leading to the parasitic capacitance, both of which will significantly increase the total capacitance and decrease current output. Further enhancement of the mobility can be achieved in the future by the passivation of the NW surfaces such as the (NH 4 ) 2 S treatment, − while current investigations are ongoing. In the future, the NW device performance can also be further improved through the enhancement of NW print density, alignment, channel length scaling, and the integration of high- k dielectric in the top-gated structures.…”

Section: Resultsmentioning

confidence: 99%

Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

et al. 2012

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InAs nanowires have been extensively studied for high-speed and high-frequency electronics due to the low effective electron mass and corresponding high carrier mobility. However, further applications still suffer from the significant leakage current in InAs nanowire devices arising from the small electronic band gap. Here, we demonstrate the successful synthesis of ternary InGaAs nanowires in order to tackle this leakage issue utilizing the larger band gap material but at the same time not sacrificing the high electron mobility. In this work, we adapt a two-step growth method on amorphous SiO(2)/Si substrates which significantly reduces the kinked morphology and surface coating along the nanowires. The grown nanowires exhibit excellent crystallinity and uniform stoichiometric composition along the entire length of the nanowires. More importantly, the electrical properties of those nanowires are found to be remarkably impressive with I(ON)/I(OFF) ratio >10(5), field-effect mobility of ∼2700 cm(2)/(V·s), and ON current density of ∼0.9 mA/μm. These nanowires are then employed in the contact printing and achieve large-scale assembly of nanowire parallel arrays which further illustrate the potential for utilizing these high-performance nanowires on substrates for the fabrication of future integrated circuits.

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Section: методы модификации поверхностиunclassified

“…Состав водного раствора сульфида аммония изменялся также путем добавления в него некоторого количества сульфата аммония (NH 4 ) 2 SO 4 [203]. Данный раствор был применен сначала для пассивации поверхности InAs(111)A [203], что привело к снижению скорости повторного окисления при длительной выдержке на воздухе по сравнению с поверхностями, обработанными водными растворами сульфида натрия или сульфида аммония. В дальнейшем обработка таким раствором использовалась для модификации поверхности GaSb(100), и было показано заметное улучшение вольт-амперных характеристик барьеров Шоттки Au/n-GaSb(100) [204][205][206].…”

Section: методы модификации поверхностиunclassified

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

Лебедев¹

2020

Физика И Техника Полупроводников

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Recent experimental and theoretical results on modification of the surface atomic and electronic structure of various III–V semiconductor with electrolyte solutions are reviewed. The relationship between the chemical and charge transfer processes that proceed at the semiconductor/electrolyte interfaces and accompanying modification of the semiconductor surface atomic and electronic structure is revealed. Advances in the application of electrolyte solutions for modification of the semiconductor nanostructures and device performance are discussed.

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Chalcogen based treatment of InAs with [(NH4)2S/(NH4)2SO4]

Cited by 7 publications

References 17 publications

Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na ⁺ and K ⁺

Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na ⁺ and K ⁺

Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

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Chalcogen based treatment of InAs with [(NH4)2S/(NH4)2SO4]

Cited by 7 publications

References 17 publications

Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na + and K +

Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na + and K +

Synthesis and Characterizations of Ternary InGaAs Nanowires by a Two-Step Growth Method for High-Performance Electronic Devices

Модификация Атомной И Электронной Структуры Поверхности Полупроводников А-=sup=-Iii-=/Sup=-В-=sup=-v-=/Sup=- На Границе С Растворами Электролитов О Б З Ор

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Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na ⁺ and K ⁺

Confining FeS in graphitized carbon with void space for high and stable electrochemical storage performance of Na ⁺ and K ⁺