Chalcogenide glass e-beam and photoresists for ultrathin grayscale patterning

Electron beam-induced mass transport in As–Se thin films: compositional dependence and glass network topological effects

“…Electron beam (e-beam)-induced surface patterning of ChG has attracted considerably less attention and successful attempts to obtain SR on ChG thin films till now have been made on the basis of well-known two-step method exploiting the phenomenon of photo-induced changes in the dissolution rate of ChG (see reviews [15,16] as an example). A limited number of thorough experimental studies devoted to the direct formation of SR by e-beam exposure have been performed recently.…”

Theoretical prediction of physical parameters of GexSb20−x Te80 (x = 11, 13, 15, 17, 19) bulk glassy alloys

“…Recently, a new term -"chalcogenide photonics" -has been coined [3] and has also been used in plasmonics applications [4]. Thin films of chalcogenide glass are promising materials for use as high-resolution, gray scale photo-and electronbeam resists for nanoscale and ultrathin applications in MEMS/NEMS technology [5].…”

Laser-induced grayscale patterning in TeOx thin films

“…Generally speaking, grayscale patterns are continuous or multilevel surface micro-or nanostructures on the sample surface. Various fabrication techniques have been reported to create surface gradient height structures, such as photo-induced lithography [7], electron-beam lithography [8], and focused ion beam lithography [9]. However, many of these techniques either require unconventional and costly process equipment, or are not suitable for repeatable batch fabrication [2].…”

“…Furthermore, the grayscale patterns are usually fabricated on photoresist by beams with special intensity in these grayscale lithography techniques, but the resist is usually covered by a mask [10,11], in which the template patterns have been pre-fabricated. Many masks have been created on chalcogenide glass [8], chrome [12], and polymer [13]. In lithography process, the amount of retained resists after undergoing exposure and development processes is according to the grayscale level of the mask [12].…”

“…Given the difference of exposure intensity on the resist after the mask, the 3-dimensional patterns with gradual height profile could be obtained after the remaining resist has been developed and etched. Nowadays, large-area patterns with gradient profiles have been fabricated successfully by grayscale lithography using photoresist; this plays an important part in further transferring the patterns to the silicon substrate with reactive ion etching (RIE) technology [8,14]. However, photoresist is only sensitive to a certain laser wavelength.…”