Chalcopyrite Thin-Film Materials and Solar Cells

Unold, Thomas; Kaufmann, Christian A.

doi:10.1016/b978-0-08-087872-0.00121-9

Cited by 23 publications

(10 citation statements)

References 155 publications

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“…CIS flexible SCs are developed on metallic and polymer foil substrates (see [27][28][29]). The following construction of effective thin-film solar cells based on CIS, Mo/CuInSe 2 /-CuIn 3 Se 5 /CdS/ZnO/ZnO:Al, was considered in paper [30].…”

Section: Development Of Flexible Solar Cells Based On Cds/cdte With Amentioning

confidence: 99%

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

Khrypunov¹,

Kudii²,

Kovtun³

et al. 2019

International Journal of Photoenergy

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By the method of nonreactive high-frequency magnetron sputtering on Upilex polyimide films, transparent and conductive layers of ITO were obtained. These layers, after high-temperature annealing, at temperatures typical for the solar cell formation, had a resistance of 11 ohm/□ and a transmittance of up to 72%. The use of such an ITO layer with the addition of a 100 nm thick layer of undoped zinc oxide, as the front contact, and Cu/ITO composition, as the back contact, made it possible to obtain a flexible solar cell polyimide/ITO/CdS/CdTe/Cu/ITO with an efficiency of 10.4%. With a thickness of the base layer of cadmium telluride 2.5 μm, the average transmittance of the SC in the 850-1100 nm wavelength range is 46.8%. The developed design of a flexible solar cell based on cadmium telluride due to the use of a transparent back contact with a comb metal electrode is easily interfaced with existing designs of flexible solar cells based on copper and indium diselenide, which allow the formation of flexible tandem photoelectric converters CdTe/CuInSe2.

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Section: Development Of Flexible Solar Cells Based On Cds/cdte With Amentioning

confidence: 99%

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

Khrypunov¹,

Kudii²,

Kovtun³

et al. 2019

International Journal of Photoenergy

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“…Широкий спектр різних методів осадження можуть бути використані для нанесення тонких плівок халькопірита, підходящого для створення сонячних батарей, з перевагами і недоліками за вартістю, масштабністю та продуктивністю. Останнім часом комерціалізація тонких плівок халькопірита була розширена до діапазону ГВт, довівши конкурентоспроможність цих технологій у порівнянні з технологіями створення сонячних кристалічних кремнієвих батарей [3]. Однак, про-блема отримання гомогенних і стехіометричних плівок CIGS на теперішній час ще не є повніс-тю вирішеною.…”

Section: вступunclassified

SRUCTUAL AND OPTICAL PROPERTIES OF Cu(In,Ga)Se2 THIN FILMS

Хомяк¹

2012

SEMST

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Анотація. Описані технологічні умови отримання тонких плівок методом термічного випаровування на основі CuIn x Ga 1-x Se 2 (CIGS) та досліджені спектри їх оптичного пропускання і поглинання. Про-ведено розрахунок оптичних констант плівок CIGS за спектрами пропускання та відбивання в області 0.25 -0.9 мкм. Складна енергетична структура валентної зони CIGS підтверджена результатами екс-периментальних досліджень.Ключові слова: тонка плівка, Cu(In,Ga)Se 2 , XRD, AFM, SEM SRUCTUAL AND OPTICAL PROPERTIES OF Cu(In,Ga)Se 2 THIN FILMS V.V. KhomyakAbstract. The given describes the technological conditions to obtain CuIn x Ga 1-x Se 2 (CIGS) thin films with thermal evaporation method and presents the measured spectra of both optical transmission and reflection. The optical constants of CIGS were calculated from the spectra data obtained in the range 0.25 -0.9 μm. The valance band structure of CIGS was proved to be complicated judging from the results of experiments carried out.

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“…Quaternary chalcopyrite semiconductor alloy Cu(In,Ga)Se 2 (CIGS) represents one of the most suitable materials to produce low-cost and high-efficiency photovoltaic modules and hence can be considered as an appropriate alternative to the silicon technology. Recently, CIGS solar cells have gathered a noteworthy attention, since they possess a direct band gap falling within the range useful for several important applications, such as solid state lighting and high-efficiency photovoltaic modules [1]. Specifically, thin-film CIGS solar cells have emerged as a technology that could challenge the current dominance of silicon solar cells.…”

Section: Introductionmentioning

confidence: 99%

Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

Parisi

Pernice

Rocca

et al. 2015

International Journal of Photoenergy

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We demonstrate an innovative CIGS-based solar cells model with a graded doping concentration absorber profile, capable of achieving high efficiency values. In detail, we start with an in-depth discussion concerning the parametrical study of conventional CIGS solar cells structures. We have used the wxAMPS software in order to numerically simulate cell electrical behaviour. By means of simulations, we have studied the variation of relevant physical and chemical parameters—characteristic of such devices—with changing energy gap and doping density of the absorber layer. Our results show that, in uniform CIGS cell, the efficiency, the open circuit voltage, and short circuit current heavily depend on CIGS band gap. Our numerical analysis highlights that the band gap value of 1.40 eV is optimal, but both the presence of Molybdenum back contact and the high carrier recombination near the junction noticeably reduce the crucial electrical parameters. For the above-mentioned reasons, we have demonstrated that the efficiency obtained by conventional CIGS cells is lower if compared to the values reached by our proposed graded carrier concentration profile structures (up to 21%).

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Chalcopyrite Thin-Film Materials and Solar Cells

Cited by 23 publications

References 155 publications

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

SRUCTUAL AND OPTICAL PROPERTIES OF Cu(In,Ga)Se2 THIN FILMS

Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

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Chalcopyrite Thin-Film Materials and Solar Cells

Cited by 23 publications

References 155 publications

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe2

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe2

SRUCTUAL AND OPTICAL PROPERTIES OF Cu(In,Ga)Se2 THIN FILMS

Graded Carrier Concentration Absorber Profile for High Efficiency CIGS Solar Cells

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Product

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Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂

Development of Back and Front Contacts for CdTe Layer in Tandem Flexible Photoelectric Converters on Basis of CdTe/CuInSe₂