Challenges and opportunities for HfO&lt;inf&gt;X&lt;/inf&gt; based resistive random access memory

Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Tsai, Chen-Han; Gu, Pei-Yi; Wu, Tung Ying; Tsai, Kuang‐Lei; Sheu, Shyh-Shyuan; Lin, Wei‐Cheng; Lin, Che-Hsin; Chiu, Pi-Feng; Chen, Wen Shan; Chen, F. T.; Lien, Chenhsin; Tsai, Ming-Jinn

doi:10.1109/iedm.2011.6131649

Cited by 32 publications

(23 citation statements)

References 4 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…6. (2,24), (2,25), (2,26), (3,24), (4, 25), (5, 25), (6, 26), (7,26), (8,27), (9, 27), (9, 28), (9, 29), (10, 28), (11,29), (12,29), (13,30), (14,30), (15,31), (16,32), (17,33), (18,34), (19,35) …”

Section: Application Examples and Resultsmentioning

confidence: 99%

“…Both ES and the fault diagnosis method based on tFRSN P systems (FDM-tFRSNP) can make full use of experts' knowledge. The differences are: an ES needs long response time and the maintenance of its knowledge base is difficult [18]; FDMtFRSNP possesses parallel reasoning ability and adopt graphical knowledge representation and reasoning, which can avoid the main limitation of ES.…”

Section: Discussionmentioning

confidence: 99%

“…FST is an effective way to represent uncertain information but the definition of membership function is a hard job [18]. The FST-based method and FDM-tFRSNP both possess the ability to deal with uncertain information of protective devices.…”

Section: Discussionmentioning

confidence: 99%

See 2 more Smart Citations

Application of Fuzzy Reasoning Spiking Neural P Systems to Fault Diagnosis

Wang

Zhang

Rong

et al. 2014

INT J COMPUT COMMUN

View full text Add to dashboard Cite

This paper discusses the application of fuzzy reasoning spiking neural P systems with trapezoidal fuzzy numbers (tFRSN P systems) to fault diagnosis of power systems, where a matrix-based fuzzy reasoning algorithm based on the dynamic firing mechanism of neurons is used to develop the inference ability of tFRSN P systems from classical reasoning to fuzzy reasoning. Some case studies show the effectiveness of the presented method. We also briefly draw comparisons between the presented method and several main fault diagnosis approaches from the perspectives of knowledge representation and inference process.

show abstract

Section: Application Examples and Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Application of Fuzzy Reasoning Spiking Neural P Systems to Fault Diagnosis

Wang

Zhang

Rong

et al. 2014

INT J COMPUT COMMUN

View full text Add to dashboard Cite

show abstract

“…This is due to the different ReRAM geometries and to the large variability of the cells utilized for the demonstrator. Nevertheless, improved variability of one order of magnitude has been demonstrated for ReRAM prototypes fabricated with industrial methods [26].…”

Section: Device Descriptionmentioning

confidence: 99%

Applications of Multi-Terminal Memristive Devices: A Review

Sacchetto

Gaillardon

Zervas

et al. 2013

IEEE Circuits Syst. Mag.

View full text Add to dashboard Cite

Memristive devices have the potential for a complete renewal of the electron devices landscape, including memory, logic and sensing applications. This is especially true when considering that the memristive functionality is not limited to two-terminal devices, whose practical realization has been demonstrated within a broad range of different technologies. For electron devices, the memristive functionality can be generally attributed to a state modification, whose dynamics can be engineered to target a specific application. In this review paper, we show examples of two-terminal Resistive RAMs (ReRAM) for standalone memory and Field Programmable Gate Arrays (FPGA) applications. Moreover, a Generic Memory Structure (GMS) utilizing two ReRAMs for 3D-FPGA is discussed. In addition, we show that trap charging dynamics can explain some of the memristive effects previously reported for Schottky-barrier field-effect Si nanowire transistors (SB SiNW FETs). Moreover, the SB SiNW FETs do show additional memristive functionality due to trap charging at the metal/semiconductor surface. The combination of these two memristive effects into multi-terminal MOSFET devices gives rise to new opportunities for both memory and logic applications as well as new sensors based on the physical mechanism that originate memristance. Finally, the multi-terminal memristive devices presented here have the potential of a very high integration density, and they are suitable for hybrid CMOS co-fabrication with a CMOS-compatible process.

show abstract

“…RRAM has received significant attention due to its high scalability, fast write/erase operation, low power consumption and relatively simple fabrication process compared with conventional Flash technology [1,2]. Although the switching characteristics have been explained by many theories, the switching mechanisms are still not fully understood, the most problematic step is the electroforming process of these metal oxide resistive switching (RS) materials [3].…”

Section: Introductionmentioning

confidence: 99%

The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

Liu¹,

Fang²

2017

Proceedings of the 2017 6th International Conference on Energy, Environment and Sustainable Development (ICEESD 2017)

View full text Add to dashboard Cite

Abstract. The forming process and SET-RESET mechanism of Pt/TiO2/Al resistive random access memory (RRAM) are investigated. Forming process was implemented by consecutive voltage sweep instead of one-step operation. After forming process, bidirectional self-rectifying characteristics was exhibited. In following SET and RESET operation with ±3V bias, this device can be used as a selector-less device without additional process steps. The characteristics of normal resistive switching is explained by analytical model and verified through simulation.

show abstract

Challenges and opportunities for HfO<inf>X</inf> based resistive random access memory

Cited by 32 publications

References 4 publications

Application of Fuzzy Reasoning Spiking Neural P Systems to Fault Diagnosis

Application of Fuzzy Reasoning Spiking Neural P Systems to Fault Diagnosis

Applications of Multi-Terminal Memristive Devices: A Review

The study of Forming process and Modeling of Bidirectional Self-Rectifying Pt/TiO2/Al Structured RRAM

Contact Info

Product

Resources

About