Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs

Comparison of oxygen vacancy defects in crystalline and amorphous Ta2O5

“…Tantalum pentoxide (Ta 2 O 5 ) is an important high dielectric constant oxide that has been proposed as a DRAM capacitor dielectric and as a replacement gate oxide for CMOS [1][2][3][4]. However, it was not used as a gate oxide because of its reactivity with Si and its small conduction band offset to Si [5].…”

Structural and electrical properties of Ta 2 O 5 thin films prepared by photo-induced CVD

“…High-dielectric-constant (high-k) materials, such as HfO 2 , Ta 2 O 5 and Er 2 O 3 , are now being intensively studied in view of their use in further generations of integrated circuits as a replacement for the currently dominant SiO 2 (Atanassova and Paskaleva 2007;Losurdo et al 2007). Specifically, Ta 2 O 5 thin film was identified to be exceptionally appropriate for applications in high-density dynamic-random-access memories (DRAMs), as well as in metal-oxide-semiconductor field-effect transistors (MOSFETs) and transparent optical coatings (Huang et al 2002;Jolly et al 2003;Lee and Jan 2005) due to its potential properties, such as a wide bandgap, high dielectric constant and high refractive index (Jain et al 2005).…”

Microstructural and electrical properties of CaTiO3–CaCu3Ti4O12 ceramics

“…Dielectric materials can be applied to several devices, including dynamic random access memory (DRAM), ceramic capacitors, and microwave devices [1][2][3][4]. In fact, in both DRAMs as and metal-oxidesemiconductor field-effect transistor (MOSFET), the dielectric is often thin enough that the leakage current increases to an intolerable level.…”