Change of Electric Properties of the Border of the «metal-Semiconductor» Section Under the Effect of Ion Irradiation

Abstract

The paper first proposes a method of targeted direct transformation of the characteristics of a silicon bipolar high-power microwave transistor due to a change in the chemical composition at the «molybdenum - silicon» interface, the electrophysical properties of «molybdenum - silicon» contacts, and the electrophysical characteristics of transistor structure regions by irradiating «molybdenum - silicon» emitters with phosphorus ions transistor. The possibilities of this method are investigated and confirmed by experiments.