Subject of research: the influence of the concentration and composition of alloying elements Mn, Ti, Cr, Y, Mo, W, V on the change in the aluminum recrystallization temperature. Purpose of research: to find the optimal concentration of alloying additives, at which the recrystallization temperature reaches its maximum value. Methods and objects of research: using the methods of thermodynamic analysis of binary state diagrams of aluminum with alloying additives, it has been established that the nature of the change in the recrystallization temperature depends on what type of eutectic or peritectic reaction the formation of intermetallic compounds belongs to. It is shown that aluminides act as alloy modifiers and impart high mechanical properties to products. Main results of research: it was found that for the AlMn system, the optimal content of Mn should be considered 0.2%, for the AlCr system, the maximum increase in the Al recrystallization temperature is observed at 0.6% Cr, for the AlY system, the mechanical properties of Al at elevated temperatures maximum at 1% Y.

The paper presents the results of studies on the formation of ohmic contacts to monosilicon from aluminum in the presence of a thin-film barrier layer based on titanium and tungsten. The purpose of reseach: to study the mechanism of solid-phase interaction in Al/Ti/Si and Al/Ti/SiOx/Si systems during the formation of contacts to (111) orientation silicon based on aluminum with a Ti and W 10% Ti barrier layer, their structural and morphological properties and ways to manage this mechanism. The study revealed relationships between the structure and properties of the films, which can lead to marriage or a decrease in the service characteristics of the IC due to a violation of the structure of the film composition. Methods and objects of research: It is shown that the difference in the behavior of thick and thin oxides is consistent with the thermodynamic data for bulk materials. In this case, the formation and final electrical properties of the silicidesilicon interface region depend on the presence of unavoidable impurities present during the deposition of the reacting metal. As a result of electron microscopic studies of the Al/WTi/Si system, it was found that the tungsten10 % (wt.) titanium barrier layer is reliably thermally stable up to a temperature of 773 K, regardless of the layer thickness (0.050.12 m).

The paper considers the formation of a transition layer of Mo - Si contacts, as well as the effect of Mo film deposition regimes and methods of heat treatment of contacts. It was found that when forming contacts of microwave transistors, by deposition of a Mo film on the surface of an epitaxial silicon layer, the structure of the latter depends on the dose of doping with phosphorus ions and on the temperature of post-implantation annealing. The results of experiments and two-dimensional physico-mathematical modeling to study the dependence of the parameters of test samples of the KT916A transistor depending on the dose of matching the emitters with phosphorus ions through a molybdenum film are presented. It is shown that with an increase in the doping dose, the surface and maximum concentration of phosphorus increases. At the same time, both energy and frequency characteristics of the transistor are improved, and the radiation resistance increases.

The work is devoted to the study of the influence of the sequence of metal layers in two-layer films (Al 0.5% Ni)/Mo and composition SiO2/Si (111) on the phase composition and structural perfection of Al 0.5% Ni films. The samples used in the experiment were two-layer metal films (Al 0.5% Ni)/Mo and Mo/(Al 0.5% Ni), which were deposited on monosilicon substrates of orientation (111) and composition SiO2/Si (111). The influence of the arrangement of metal layers on the phase composition, crystallographic orientation of aluminum grains and their distribution over the thickness of Al 0.5% Ni films has been studied. It is shown that the annealing of the Al/Mo/Al system in an oxygen atmosphere significantly affects the density of oxides on the surface of the aluminum film, which is facilitated by the high affinity of aluminum for oxygen and the polymorphism of its compounds with oxygen in a wide temperature range.

The paper first proposes a method of targeted direct transformation of the characteristics of a silicon bipolar high-power microwave transistor due to a change in the chemical composition at the «molybdenum - silicon» interface, the electrophysical properties of «molybdenum - silicon» contacts, and the electrophysical characteristics of transistor structure regions by irradiating «molybdenum - silicon» emitters with phosphorus ions transistor. The possibilities of this method are investigated and confirmed by experiments.