Change of high-voltage conduction mechanism in vertical GaN–on–GaN Schottky diodes at elevated temperatures

Sandupatla, Abhinay; Arulkumaran, S.; Ng, G. I.; Ranjan, Kumud; Deki, Manato; Nitta, Shugo; Honda, Y.; Amano, Hiroshi

doi:10.35848/1882-0786/ab93a0

Cited by 3 publications

(4 citation statements)

References 28 publications

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“…[ 249 ] The reliability and thermal management of vertical GaN devices are also superior by moving the peak electric field away from the surface into bulk. The high‐mobility GaN drift regions are usually grown on the high conductivity substrates, such as freestanding n + ‐GaN [ 250–253 ] and n + ‐Si. [ 254–256 ] The fully vertical drift regions can also directly contact to the electrodes after the selective removal of the substrates and buffer layers, followed by a wafer‐bonding transfer procedure.…”

Section: Discussionmentioning

confidence: 99%

“…[ 260–264 ] In particular, the current aperture vertical electron transistor (CAVET) [ 265–268 ] and trench CAVET [ 269–271 ] can operate the device by controlling the 2DEG channel, similarly to the lateral GaN HEMTs. Recently, the advanced vertical and quasi‐vertical GaN Schottky barrier diodes (SBDs), [ 253,272,273 ] junction barrier Schottky diodes, [ 274 ] fin MOSFETs, [ 275 ] trench MOSFETs, [ 276 ] superjunction diodes [ 277 ] and PN diodes [ 278–280 ] have successively raised the V BD from 600 to 4000 V with low R on . The roadmap of high‐performance vertical GaN power devices is to realize the low‐cost layer transfer and homoepitaxy technologies, while the lateral GaN power HEMT applications focus on the device reliability and the compatibility with the matured Si‐CMOS lines.…”

Section: Discussionmentioning

confidence: 99%

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Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

135

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The ever‐increasing power density and operation frequency in electrical power conversion systems require the development of power devices that can outperform conventional Si‐based devices. Gallium nitride (GaN) has been regarded as the candidate for next‐generation power devices to improve the conversion efficiency in high‐power electric systems. GaN‐based high electron mobility transistors (HEMTs) with normally‐off operation is an important device structure for different application scenarios. In this review, an overview of a series of effective approaches to improve the performance of GaN‐based power HEMT devices is given. Modified epistructures are presented to suppress defects and current leakage, and low‐damage recess‐free processes are discussed in fabricating normally‐off HEMTs. Possible effects of dielectrics on a metal–insulator–semiconductor (MIS) structure are also intensively introduced. Metal/semiconductor contact engineering is investigated, and fabrication of Au‐free ohmic contact and graphene insertion layer to enhance the device performance is emphasized. Finally, the effects of field plates are studied through the use of simulated and fabricated devices.

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Section: Discussionmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 99%

Recent Advances in GaN‐Based Power HEMT Devices

Cheng

Wang

et al. 2021

Adv Elect Materials

135

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“…Shibata, D. et al has reported the use of junction barrier Schottky (JBS) with p-type termination on SBDs with 13 µm thick DL to measure a V BD value of 1600 V [64]. The improvement in V BD was reported to be due to the reduction of CCD in the MOCVD grown GaN DLs [43,58].…”

Section: Breakdown Voltage Of Sbdmentioning

confidence: 99%

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Sandupatla

Arulkumaran

et al. 2020

Micromachines

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Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V.

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“…In previous papers, the high leakage current in Schottky diodes on bulk GaN was correlated with the presence of structural defects in the epilayer [11,12,13]. Moreover, the mechanisms of current transport dominating the electrical behaviour at the metal/GaN interface have been recently discussed [14,15]. New metallization schemes or advanced field plate structures have been proposed to reduce the leakage current in vertical Schottky diodes on homoepitaxial GaN epilayers.…”

Section: Introductionmentioning

confidence: 99%