Channel Temperature Measurement of AlGaN/GaN HEMTs by Forward Schottky Characteristics

Abstract

Channel temperature measurements of multi-finger AlGaN/GaN HEMTs by forward Schottky characteristics are presented. The temperature dependence of the forward gate-source Schottky junction voltage is investigated and it is used as the temperature sensitive parameter (TSP) by pulsed switching technique. The channel-to-mounting thermal resistance of the tested AlGaN/GaN HEMT sample is 19.6 ∘ C/W. Compared with both the measured results by micro-Raman method and simulated results of a three-dimensional heat conduction model, the physical meaning of the channel temperature for AlGaN/GaN HEMT tested by pulsed switching electrical TSP method is investigated quantitatively for the first time.

Assessment of pulse conditions effects on reliability in GaN-based high electron mobility transistors by transient temperature measurements

“…The maximum temperature of channel in each electrical pulse can be obtained from the exponential fitting and regress calculation. The accuracy of the tested channel temperature is 60.3 K. 16 The characteristics of heat accumulation and the effect of cycle pulse on channel temperature can be studied by measuring the transient temperature rise while changing the duty cycle and frequency of the pulse.…”

“…[4][5][6] Moreover, the channel temperature caused by self-heating effect is correlated with the device lifetime. 7 The accurate results of the self-heating effect for devices in DC operation can be obtained from simulation, [8][9][10] infrared image method, 11 micro-Raman thermography, 12,13 and electrical temperature sensitive parameter methods, [14][15][16] etc. However, most of the GaN-based HEMTs applications are commonly operated in pulse mode, with pulse length on the order of 1-500 ls for radar and sub-microsecond to millisecond for communication application.…”

Determination of Channel Temperature in AlGaN/GaN HEMTs by Pulsed I — V Characteristics

“…However, these measurements simplify the relationship of dc performance on channel temperature and neglect the potential degradation and current collapse, which may affect the accuracy of the calculated results. Zhang et al [7] measured the channel temperature of AlGaN/GaN HEMTs with a pulsed switching technique by selecting the forward voltage of the gate-source Schottky junction as a TSP. However, their method requires complex experimental equipment for special device operation and essentially separates the self-heating duration and measurement period.…”

A Novel Method for Measuring the Temperature in the Active Region of Semiconductor Modules

“…[1−4] There are several techniques available to measure semiconductor device temperature under the different conditions used. [5,6] For example, the infrared scanning image method only measures the surface temperature, resulting in the destruction of the device package; the spectroscopic method is suitable for the kind of light-emitting devices; and the electrical method needs to collect the temperature-sensitive parameters which are limited for some devices. [7−9] In addition, multiple active regions usually exist in a large semiconductor modules, resulting in the non-uniformly distributed temperature, hence making the determination of the active operating temperature even more difficult.…”