Channeling in low energy boron ion implantation

Michel, A. E.; Kastl, R. H.; Mäder, Sebastian; Masters, B. J.; Gardner, Jason A.

doi:10.1063/1.94790

Cited by 95 publications

(25 citation statements)

References 3 publications

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“…A 7' beam divergence was assumed. Also plotted is the experimental result of Michel, et al [9], which was scaled to match the dose of the calculated profiles. The stopping power used in the default Firsov model in MARLOWE is clearly too large.…”

Section: Results and Conclusionmentioning

confidence: 99%

Electronic Stopping Power for Low Energy Ions

1985

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A procedure to be used in ion implantation calculations has been developed to determine the stopping power of an ion at low energy as a function of its effective charge. The ion effective charge accounts for screening of the ion and has been found to have considerable effect on the stopping power through its dependence on the target electron density.Steps in the procedure include: the calculation of the Fermi momentum of the target, calculation of the relative velocity between the projectile and target electron cloud, determination of the screening distance for the ion, and calculation of the proton stopping power Sp according to the density-functional formalism. The ion stopping power is then S(ZI):(Z) 2Sp,• where Z* is the ion effective charge. The procedure can be applied to semiconductors and metals. Comparisons are reported with the predictions of the Firsov and Lindhard methods which do not include any effective charge or shell structure considerations. The computer program MARLOWE has been modified to include this method for calculating the stopping power. Results in the form of implanted boron profiles in silicon will be presented.

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Section: Results and Conclusionmentioning

confidence: 99%

Electronic Stopping Power for Low Energy Ions

1985

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“…In both figures the stepped lines are the results of the Monte Carlo calculation (the solid lines refer to a 7" beam divergency and the broken lines to a 0" divergency) and the solid curve passes through experimental results obtained by SIMS (Michel et al 1984). It is seen that, in the case of the axial orientation ( fig.…”

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confidence: 94%

“…Recently much experimental (Ziegler and Lever 1985, Michel, Kastl, Mader, Mader and Gardner 1984, Cembali, Servidori and Mazzone 1985 and theoretical (Giles and Gibbons 1985, Oen 1986, Hautala 1985 work has been dedicated to the study of minor channels near the (100) axis in silicon. The main conclusion of these studies is that packed crystallographic directions may offer relatively wide avenues to the incoming ions.…”

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confidence: 99%

On anomalous channelling effects in ion-implanted silicon

Mazzone¹

1987

Philosophical Magazine Letters

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“…14 Recently, the concept of low temperature solid phase epitaxy growth ͑LTSPEG͒ has regained interest. 19,20 However, implantation-induced defects cannot be completely removed under such low thermal budget annealing. First, boron activation in the regrown region is significantly enhanced, with boron solid solubility much higher than that of high temperature annealing.…”

Section: Introductionmentioning

confidence: 99%

Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

Zhu

Martı́n

Hollander

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The stability of p + / n junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth ͑LTSPEG͒ are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a ͑MeV͒ implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG.

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Channeling in low energy boron ion implantation

Abstract: Ultra low energy boron implantation using cluster ions for decananometer MOSFETs AIP Conf.

Cited by 95 publications

References 3 publications

Electronic Stopping Power for Low Energy Ions

Electronic Stopping Power for Low Energy Ions

On anomalous channelling effects in ion-implanted silicon

Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth

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