Chapter 5 Photoluminescence II: Gallium Arsenide

Williams, E.W.; Bebb, H. Barry

doi:10.1016/s0080-8784(08)62346-7

Cited by 74 publications

(27 citation statements)

References 126 publications

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“…The absence of this peak in the sample # GT1 grown at T S ≈ 450 °C can be associated with much worse structural perfection of # GT1 layer compared to # GT2 . The peak at 1.25 eV, which is the only one registered in the PL spectra of both samples (# GT1 and # GT2 ), probably corresponds to the radiation of a gallium vacancy complex in the GaAs substrate [ 119 ]. This assumption was confirmed by observation of the same peak in the PL spectrum of the bare GaAs substrate without the GaTe layer.…”

Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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Development of molecular beam epitaxy (MBE) of two-dimensional (2D) layered materials is an inevitable step in realizing novel devices based on 2D materials and heterostructures. However, due to existence of numerous polytypes and occurrence of additional phases, the synthesis of 2D films remains a difficult task. This paper reports on MBE growth of GaSe, InSe, and GaTe layers and related heterostructures on GaAs(001) substrates by using a Se valve cracking cell and group III metal effusion cells. The sophisticated self-consistent analysis of X-ray diffraction, transmission electron microscopy, and Raman spectroscopy data was used to establish the correlation between growth conditions, formed polytypes and additional phases, surface morphology and crystalline structure of the III–VI 2D layers. The photoluminescence and Raman spectra of the grown films are discussed in detail to confirm or correct the structural findings. The requirement of a high growth temperature for the fabrication of optically active 2D layers was confirmed for all materials. However, this also facilitated the strong diffusion of group III metals in III–VI and III–VI/II–VI heterostructures. In particular, the strong In diffusion into the underlying ZnSe layers was observed in ZnSe/InSe/ZnSe quantum well structures, and the Ga diffusion into the top InSe layer grown at ~450 °C was confirmed by the Raman data in the InSe/GaSe heterostructures. The results on fabrication of the GaSe/GaTe quantum well structures are presented as well, although the choice of optimum growth temperatures to make them optically active is still a challenge.

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Section: Resultsmentioning

confidence: 99%

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

et al. 2020

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“…For this experiment, Ex-146, and Ex145-A and -B samples are used. The FWHM ( W ), in general, is given by the configurational-coordinate model equation [ 39 ]: W = A ( coth ℏω /2 kT ) 1/2 where A is a constant whose value is equal to W as the temperature approaches 0 K, and ℏω is the energy of the vibration mode of the excited state. In this paper, Equation (5) has been fitted to the experimental values for each sample.…”

Section: Resultsmentioning

confidence: 99%

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Hamada

2017

Materials

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Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01−1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1−11] and [11−1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.

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“…The configuration coordinate model (often used by photo-chemists) successfully explained optical properties of insulators such as alkali halides. 2,19 Interestingly, while for many defects in semiconductors there is no clear proof for the Seitz-Mott mechanism of thermal quenching, this model commonly serves as almost the sole illustration of the thermal quenching of luminescence from deep-level defects in numerous reviews, monographs, and textbooks, 3, [20][21][22][23][24][25][26]…”

Section: A Historical Overviewmentioning

confidence: 99%

“…An instructive example of confusing the two mechanisms of the PL quenching is the self-activated PL in GaAs with the peak at 1.2 eV that is attributed to the gallium vacancy-shallow donor (V Ga D) complexes. 20 Williams 66 explained the temperature dependence of the 1.2 eV PL intensity by the Seitz-Mott mechanism and attributed the activation energy of 0.18 eV to a barrier between the excited and ground state of the luminescence center. Later, however, Glinchuk and Prokhorovich 9,27 observed the characteristic competition between the recombination channels and unambiguously proved that the PL quenching occurs via the Sch€ on-Klasens mechanism for the V Ga D acceptors.…”

Section: About the Seitz-mott Mechanism Of Pl Quenchingmentioning

confidence: 99%

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

Reshchikov

2014

Journal of Applied Physics

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Mechanisms of thermal quenching of photoluminescence (PL) related to defects in semiconductors are analyzed. We conclude that the Sch€ on-Klasens (multi-center) mechanism of the thermal quenching of PL is much more common for defects in III-V and II-VI semiconductors as compared to the Seitz-Mott (one-center) mechanism. The temperature dependencies of PL are simulated with a phenomenological model. In its simplest version, three types of defects are included: a shallow donor, an acceptor responsible for the PL, and a nonradiative center that has the highest recombination efficiency. The case of abrupt and tunable thermal quenching of PL is considered in more detail. This phenomenon is predicted to occur in high-resistivity semiconductors. It is caused by a sudden redirection of the recombination flow from a radiative acceptor to a nonradiative defect. V

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Chapter 5 Photoluminescence II: Gallium Arsenide

Cited by 74 publications

References 126 publications

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Molecular Beam Epitaxy of Layered Group III Metal Chalcogenides on GaAs(001) Substrates

Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

Temperature dependence of defect-related photoluminescence in III-V and II-VI semiconductors

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