Chapter 8 Ion Implantation and Thermal Annealing of III-V Compound Semiconducting Systems: Some Problems of III-V Narrow Gap Semiconductors

Myasnikov, A. M.; Герасименко, Н. Н.

doi:10.1016/s0080-8784(08)60111-8

Cited by 4 publications

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“…Generally speaking, fluences above this range will introduce defects and crystallographic dislocations [18,25], and those below this range will have very few observable effects [26]. Variation of fluence could have an influence on the degradation behaviour of the material.…”

Section: Introductionmentioning

confidence: 99%

Ion Implantation of Calcium and Zinc in Magnesium for Biodegradable Implant Applications

Somasundaram

Ionescu

Kannan

2018

Metals

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Abstract:In this study, magnesium was implanted with calcium-ion and zinc-ion at fluences of 10 15 , 10 16 , and 10 17 ion·cm −2 , and its in vitro degradation behaviour was evaluated using electrochemical techniques in simulated body fluid (SBF). Rutherford backscattering spectrometry (RBS) revealed that the implanted ions formed layers within the passive magnesium-oxide/hydroxide layers. Electrochemical impedance spectroscopy (EIS) results demonstrated that calcium-ion implantation at a fluence of 10 15 ions·cm −2 increased the polarisation resistance by 24%, but higher fluences showed no appreciable improvement. In the case of zinc-ion implantation, increase in the fluence decreased the polarisation resistance. A fluence of 10 17 ion·cm −2 decreased the polarisation resistance by 65%, and fluences of 10 15 and 10 16 showed only marginal effect. Similarly, potentiodynamic polarisation results also suggested that low fluence of calcium-ion decreased the degradation rate by 38% and high fluence of zinc-ion increased the degradation rate by 61%. All the post-polarized ion-implanted samples and the bare metal revealed phosphate and carbonate formation. However, the improved degradative behaviour in calcium-ion implanted samples can be due to a relatively better passivation, whereas the reduction in degradation resistance in zinc-ion implanted samples can be attributed to the micro-galvanic effect.

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Section: Introductionmentioning

confidence: 99%