Characterisation of sol-gel PZT films on Pt-coated substrates

Gardeniers, Han; Smith, Agnès; Cobianu, C.

doi:10.1088/0960-1317/5/2/025

Cited by 10 publications

(7 citation statements)

References 6 publications

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“…This process primarily forms a tetragonal-phase PZT layer featuring more effective ferroelectric properties than other phases [18]. The solution was spin-coated at 4000 rpm for 20 s repeatedly six times on a Pt (100 nm)/Ti (20 nm)/SiO 2 (300 nm)/Si wafer that promoted the crystallization of a perovskite PZT structure after each coating, followed by baking at 300 • C for 5 min [19]. The sample structure was subsequently annealed for 30 min at 650 • C to promote the crystallization.…”

Section: Methodsmentioning

confidence: 99%

Flexible graphene–PZT ferroelectric nonvolatile memory

et al. 2013

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We report the fabrication of a flexible graphene-based nonvolatile memory device using Pb(Zr0.35,Ti0.65)O3 (PZT) as the ferroelectric material. The graphene and PZT ferroelectric layers were deposited using chemical vapor deposition and sol–gel methods, respectively. Such PZT films show a high remnant polarization (Pr) of 30 μC cm−2 and a coercive voltage (Vc) of 3.5 V under a voltage loop over ±11 V. The graphene–PZT ferroelectric nonvolatile memory on a plastic substrate displayed an on/off current ratio of 6.7, a memory window of 6 V and reliable operation. In addition, the device showed one order of magnitude lower operation voltage range than organic-based ferroelectric nonvolatile memory after removing the anti-ferroelectric behavior incorporating an electrolyte solution. The devices showed robust operation in bent states of bending radii up to 9 mm and in cycling tests of 200 times. The devices exhibited remarkable mechanical properties and were readily integrated with plastic substrates for the production of flexible circuits.

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Section: Methodsmentioning

confidence: 99%

Flexible graphene–PZT ferroelectric nonvolatile memory

et al. 2013

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“…Integration of PZT films on Si using Pt buffer layers (also serves as bottom electrode) is a low temperature process, but the films show poor ferroelectric properties. 16,17 Recently, integration of PZT films on Si have been achieved using nanometer-thick crystalline layers, namely nanosheets. 18 Since the integration using nanosheets was achieved at 600 ºC, this gives an opportunity to extend the integration of PZT on glass using nanosheets.…”

Section: Manuscriptmentioning

confidence: 99%

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

Bayraktar

Chopra

Bijkerk

et al. 2014

Applied Physics Letters

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Integration of PbZr 0.52 Ti 0.48 O 3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro-and piezoelectric properties of PZT, welloriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)-and (110)-orientation achieved by utilizing Ca 2 Nb 3 O 10 (CNO) and Ti 0.87 O 2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5×10 9 cycles. (100)oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm 2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

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“…CeO 2 is another buffer layer which is employed in combination with YSZ to reduce the lattice mismatch further. Successful integration of functional oxides on Si substrate has been reported in literature (Chopra et al 2013, Chopra, Alexe, andHesse 2015a;Gardeniers, Smith, and Cobianu 1995). (001)-oriented growth of oxides is achieved by fabricating Si (100)/YSZ/CeO 2 /LaNiO 3 structures (Chopra et al 2013).…”

Section: Substratementioning

confidence: 99%

A Review on Piezoelectric Energy Harvesting: Materials, Methods, and Circuits

Priya

Song

Zhou

et al. 2017

Energy Harvesting and Systems

339

144

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Piezoelectric microelectromechanical systems (PiezoMEMS) are attractive for developing next generation self-powered microsystems. PiezoMEMS promises to eliminate the costly assembly for microsensors/microsystems and provide various mechanisms for recharging the batteries, thereby, moving us closer towards batteryless wireless sensors systems and networks. In order to achieve practical implementation of this technology, a fully assembled energy harvester on the order of a quarter size dollar coin (diameter=24.26 mm, thickness=1.75 mm) should be able to generate about 100 μW continuous power from low frequency ambient vibrations (below 100 Hz). This paper reviews the state-of-the-art in microscale piezoelectric energy harvesting, summarizing key metrics such as power density and bandwidth of reported structures at low frequency input. This paper also describes the recent advancements in piezoelectric materials and resonator structures. Epitaxial growth and grain texturing of piezoelectric materials is being developed to achieve much higher energy conversion efficiency. For embedded medical systems, lead-free piezoelectric thin films are being developed and MEMS processes for these new classes of materials are being investigated. Non-linear resonating beams for wide bandwidth resonance are also reviewed as they would enable wide bandwidth and low frequency operation of energy harvesters. Particle/granule spray deposition techniques such as aerosol-deposition (AD) and granule spray in vacuum (GSV) are being matured to realize the meso-scale structures in a rapid manner. Another important element of an energy harvester is a power management circuit, which should maximize the net energy harvested. Towards this objective, it is essential for the power management circuit of a small-scale energy harvester to dissipate minimal power, and thus it requires special circuit design techniques and a simple maximum power point tracking scheme. Overall, the progress made by the research and industrial community has brought the energy harvesting technology closer to the practical applications in near future.

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Characterisation of sol-gel PZT films on Pt-coated substrates

Cited by 10 publications

References 6 publications

Flexible graphene–PZT ferroelectric nonvolatile memory

Flexible graphene–PZT ferroelectric nonvolatile memory

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

A Review on Piezoelectric Energy Harvesting: Materials, Methods, and Circuits

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