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A conventional sol-gel process was used to spin-cast PZT films on oxidized Si wafers coated with sputtered Pt layers. After annealing at 550 "C4OO"C, the resulting perovskite-type PZT films showed different textures and surface morphologies, depending on whether or not a Ti adhesion layer was used. If a Ti layer was present, Ti diffusion into and through the Pt film leads to a compound &Ti, which facilitates crystallization of the perovskite PZT phase; without Ti, crystallization is more difficult and occurs via the growth of dendritic crystallites. Several optical and electrical properties of the PZT films have been measured; the first results indicate high dielectric constants (E aCCeDtable ferroelectric behaviour.

Metalorganic precursor solutions of composition Zr : Ti = 0.53 : 0.47 were used to spin-cast PZT layers on sputtered Pt films. After annealing at temperatures of 550 °C - 800 °C, the PZT films of tetragonal perovskite structure reproducibly showed different textures and surface morphologies, depending on whether or not a Ti layer was used as an adhesion layer for the Pt film. The texture differences were found to be independent of annealing treatment. It is argued that the observed texture differences are caused by a change in Pt-PZT interface composition, resulting from the diffusion of Ti into the Pt film during annealing; X-ray diffraction of an annealed Pt/Ti/SiO2/Si film combination provided evidence for a compound Pt3Ti. Annealing at 850 °C caused severe diffusion of Ti from the metal layer into the PZT film, leading to a tetragonal PZT layer with lattice constants corresponding to a Zr : Ti ratio of 30 : 70.