Characteristics of a Pin–Fin Structure Thermoelectric Uni-Leg Device Using a Commercial n-Type Mg2Si Source

Nemoto, Takashi; Iida, Tsutomu; Sato, Junichi; Oguni, Yohei; Matsumoto, Atsunobu; Miyata, Tomohiro; Sakamoto, Tatsuya; Nakajima, Tadao; Taguchi, Hayao; Nishio, K.; Takanashi, Yoshifumi

doi:10.1007/s11664-010-1277-2

Cited by 21 publications

(9 citation statements)

References 15 publications

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“…Such transition at higher temperature in terms of the electrical conductivity and Seebeck coefficient was also observed by Iida et al [29,30]. The temperature dependences of the Seebeck coefficient is illustrated by Figure 4b.…”

Section: Electronic Structuresupporting

confidence: 82%

Electronic Structure and Thermal Study of Ag3PS4 and Ag5PS4Cl2 from Direct to Indirect Energy Gap

AH¹,

Azam²

2013

J Material Sci Eng

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The band structure and density of states of the orthorhombic Ag 3 PS 4 and Ag 5 PS 4 Cl 2 compounds has been investigated. The calculations are derived from the total-energy calculations using the Full Potential-Linearized Augmented Plane Wave (FPLAPW) method. The exchange and correlation potential is treated by the Local Density Approximation (LDA), Generalized Gradient Approximation (GGA) and Engel Vosko GGA. From the study of the band structure we confirmed that the Valence Band Maximum (VBM) and Conduction Band Minimum (CBM) of Ag 3 PS 4 compounds situated at Г point, indicating a direct band gap. While for Ag 5 PS 4 Cl 2 compound the VBM occurs along the Z-S direction and CBM at Г point exhibiting indirect band gap. The partial density of states confirm that the lower part of the valence band is dominated by S-s orbital, the mid part by P-s orbital and the VBM by the Ag-d orbital. The conduction band consists the major contribution of Ag-s/p orbital. Furthermore, the thermoelectric properties of both compounds were investigated by means of BoltzTraP code. The electrical conductivity, electrical resistivity, the power factor and Seebeck coefficient were investigated in the temperature range from 300 to 800 K. The electrical conductivity was enhanced by increasing the temperature, which leads to a small electrical resistivity and a large Seebeck coefficient. Consequently, large values of about 3.75×10 11 and 1.2×10 11 W/m K 2 for Ag 3 PS 4 and Ag 5 PS 4 Cl 2 compounds were obtained. Therefore, the thermoelectric property of Ag 3 PS 4 is not as good as that of Ag 5 PS 4 Cl 2 . Therefore, it can be concluded that Ag 5 PS 4 Cl 2 is suitable for high performance thermoelectric application than Ag 3 PS 4 at higher temperature.

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Section: Electronic Structuresupporting

confidence: 82%

Electronic Structure and Thermal Study of Ag3PS4 and Ag5PS4Cl2 from Direct to Indirect Energy Gap

AH¹,

Azam²

2013

J Material Sci Eng

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“…Poor contacts can significantly degrade the module performance or even lead to device failure [9][10][11]. A very simple and effective approach is the ''mono bloc'' or one-step sintering.…”

Section: Introductionmentioning

confidence: 99%

“…Due to its simplicity this process has been applied to several material classes [12,13]. For Mg 2 Si it has been made popular by the work of Japanese groups, who have also shown Mg 2 Si based thermoelectric generators [9,[14][15][16][17]. Some of these works report values for contact resistances, differing however by orders of magnitude.…”

Section: Introductionmentioning

confidence: 99%

Fabrication and characterization of nickel contacts for magnesium silicide based thermoelectric generators

Boor

Gloanec

Kolb

et al. 2015

Journal of Alloys and Compounds

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a b s t r a c tMagnesium silicide based solid solutions are highly attractive materials for thermoelectric energy harvesting due to their abundance and excellent thermoelectric properties. Identification and testing of suitable contacts is -besides material optimization -the major challenge in the development of thermoelectric modules. We have applied Ni contacts on doped Mg 2 Si samples using a simple one-step sintering technique. These contacts were analyzed by combining microstructural analysis with spatially resolved and temperature dependent contact resistance measurements. We observe very good adhesion, homogeneous and low contact resistances <10 lX cm 2 . as well as good stability with temperature. Three different approaches for determining the contact resistances are compared and the respective errors are discussed.

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“…) or n‐type nanowires, and the thermocouple is closed by a platinum strip connecting the silicon heat sink and source. The architecture of a one‐leg device is simpler that the traditional two‐leg device architecture, and no fundamental reason objects the use of a one‐leg set‐up . The loss of conversion efficiency of a one‐leg set‐up compared to a two‐leg set‐up may well be overcompensated by a gain in simplicity, enabling a cheaper fabrication process of the miniaturized TEG.…”

Section: Device Concepts For Thermoelectric Heat‐to‐electricity Convementioning

confidence: 99%

Silicon nanostructures for thermoelectric devices: A review of the current state of the art

Schierning

2014

Physica Status Solidi (a)

102

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Silicon is the most important element of modern semiconductor industry. As a thermoelectric converter material, it would be able to promote applications dramatically since device integration and scaling of the fabrication processes could be borrowed from existing technology. Though the thermoelectric performance of single crystalline silicon is only poor, silicon nanostructures have demonstrated a competitive figure of merit. To make use of these nanostructures, novel device architectures are necessary. This review provides an overview over the physical background of silicon as thermoelectric converter material as well as different nanostructures like nanowires, porous nanomeshes, and nanocrystalline bulk and their thermoelectric properties, focusing mostly on experimental data. Further, different thermoelectric converter device concepts including nanowire device concepts, pn junction thermoelectric generators and integrated spot coolers are discussed and their realization with silicon nanostructures briefly sketched. (a) Nanowires, porous nanomeshes and nanocrystalline bulk with promising thermoelectric material's figure of merit. (b) Innovative device concepts using nanowires or large area pn junctions for thermoelectric heat‐to‐electricity conversion.

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Characteristics of a Pin–Fin Structure Thermoelectric Uni-Leg Device Using a Commercial n-Type Mg2Si Source

Cited by 21 publications

References 15 publications

Electronic Structure and Thermal Study of Ag3PS4 and Ag5PS4Cl2 from Direct to Indirect Energy Gap

Electronic Structure and Thermal Study of Ag3PS4 and Ag5PS4Cl2 from Direct to Indirect Energy Gap

Fabrication and characterization of nickel contacts for magnesium silicide based thermoelectric generators

Silicon nanostructures for thermoelectric devices: A review of the current state of the art

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