Characteristics of Al ₂ O ₃ /AlInN/GaN MOSHEMT

Testing the Temperature Limits of GaN-Based HEMT Devices

“…Native oxides are thus usually removed from the surface by wet chemical cleaning prior to the deposition of a Si 3 N 4 passivation layer in an H-rich plasma [42]. Other passivation materials are manganese oxide (MgO) [43], SiO 2 [44], and Al 2 O 3 [45]. In most cases, the passivation layer is applied after the device is fully processed and after all contacts (including the gate contact) are deposited.…”

Status of the Emerging InAlN/GaN Power HEMT Technology

“…Fig. (5) shows the improvement in gate leakage when inserting a 5 nm Al 2 O 3 gate dielectric into a MESFET with 13 nm InAlN barrier [17]. High-k dielectrics are of special interest like Al 2 O 3 and HfO 2 .…”

Enhanced two dimensional electron gas transport characteristics in Al2O3/AlInN/GaN metal-oxide-semiconductor high-electron-mobility transistors on Si substrate

“…In spite of its longer gate (L g $ 1 lm) and sourcedrain spacing (L sd $ 7 lm), the MOS-HEMT still delivers the product of f T Â L g ¼ 10 GHz lm which is better than previous reports for AlInN/GaN short channel devices on SiC 2,16 or Sapphire. 11 The effective electron velocity (V eff ) in the MOS-HEMT channel is estimated to be 0.6 Â 10 7 cm/s by using V eff ¼ 2p Á f T Á L g . A high effective electron velocity considering the large periphery of the MOS-HEMT is due to enhanced carrier transport properties.…”