Characteristics of ferroelectric 60/40 PZT films deposited by metallo-organic decomposition technology for memory applications

Zhu, Weiguang; Vest, R. W.; Tse, Man Siu; Rao, M.K.; Liu, Z. Q.

doi:10.1007/bf01198950

Cited by 11 publications

(5 citation statements)

References 18 publications

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“…The observation of TiO 2 phase in PZT substrates has been reported in the literature. 15,24 However, no detrimental effect on the ferroelectric properties of PZT films has been found in our studies due to this TiO 2 formation. Around 2 ϭ28.23°, a hump can be seen in the diffraction pattern of the film annealed at 525°C, indicating the existence of the amorphous phase.…”

Section: A X-ray Diffractioncontrasting

confidence: 39%

“…9 The PZT thin films have been fabricated by various techniques such as evaporation, 10 rf sputtering, 11 laser ablation, 12 metallo-organic chemical vapor deposition ͑MOCVD͒, 13 solgel process, 14 and metallo-organic decomposition ͑MOD͒. 15 Low-temperature processes for the production of ferroelectric thin films are needed to integrate these thin films with state-of-the-art silicon integrated circuit technology. The interfacial reactions of substrates and ferroelectric thin films at elevated temperatures are of major concern during device fabrication since they may degrade stored charge, fatigue and long-term reliability characteristics of the films.…”

Section: Introductionmentioning

confidence: 99%

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A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology

Zhu

Liu

et al. 1996

Journal of Applied Physics

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Articles you may be interested inAn investigation on the leakage current and time dependent dielectric breakdown of ferroelectric lead-zirconate-titanate thin film capacitors for memory device applications Pin-hole free ferroelectric ͑Pb,La͒͑Zr 1Ϫx Ti x ͒O 3 thin films with uniform composition have been fabricated using the metallo-organic precursor compounds, which were carefully home synthesized. The structural development, spectroscopic, and dielectric properties of these films have been systematically investigated using atomic force microscopy ͑AFM͒, x-ray diffraction, Fourier transform infrared spectroscopy, Raman scattering, and dielectric measurements. It has been found from our experimental results of PZT 40/60 thin films that the overlapping of (h00) and ͑00l͒ peaks of these films in x-ray diffraction patterns, mainly due to the small grain sizes in films, makes it very difficult to distinguish individual diffraction peaks and to identify the phases. However, Raman measurements undoubtedly reveal the Raman spectra of these films in the tetragonal phase field, demonstrating that Raman spectroscopy is an effective tool to identify structures, especially in the case of thin films having very small grains. AFM results show that the PZT perovskite structure in films may grow radially by rosettes and that microcracks appear in the three-dimensional AFM pictures at grain boundaries, which may be the cause for easy dielectric breakdown. A striking feature of the AFM observation is that three polycrystalline perovskite regions intersect symmetrically at a point with 120°to each other, and a rosette growth model for the perovskite structure in PZT films is thus proposed to explain this new phenomenon. The excellent ferroelectric properties of these films, such as the high fatigue resistance and low leakage current, are attributed to the high quality of the metallo-organic solutions and to reduce the amount of oxygen vacancies in the films by optimizing the annealing conditions and by doping a suitable amount of La ions to minimize the charge blocking of oxygen vacancy at the interface by Pt electrode. It seems that the rhombohedral PZT films with softer hysteresis loops are suitable for nonvolatile random access memory application.

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Section: A X-ray Diffractioncontrasting

confidence: 39%

Section: Introductionmentioning

confidence: 99%

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology

Zhu

Liu

et al. 1996

Journal of Applied Physics

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“…T HERE are many opportunities provided by piezoelectricity of ferroelectric thick-films for applications in micro-systems, non-volatile memories, piezoelectric sensors and actuator areas (Zhu et al, 1994;Koch et al, 1997;Haertling, 1999;Zhu et al, 2000;Futakuchi et al 2001;Wang et al, 2006;Jang and Kuo, 2007). In this field, thick-film technology constitutes a simple, flexible tool that may be seen as a convenient alternative to thinfilm and bulk piezoceramic manufacturing techniques, where thicknesses from a few to approximately a hundred micrometers are required.…”

Section: Introductionmentioning

confidence: 99%

Thick-film Piezoelectric Actuators for Micropositioning

Cicco

Morten

2009

Journal of Intelligent Material Systems and Structures

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Driven by the versatility of conventional thick-film technology, this work was aimed at investigating the application chances of the electric field induced strains in ferroelectric (thick-film) material layers. To this end an experimental investigation is described, which concerns the piezoelectric potential of PZT thick-films, screen-printed and fired on ceramic substrates, for applications in actuator development. It was carried out on a structure consisting of an alumina plate, clamped as a cantilever beam, the faces of which were supporting two symmetrically placed ferroelectric layers. An interdigital electrode system, created inside them, enabled a polarization parallel to the substrate, hence bending occurred in the regions of the beam that were covered by the films when opposite driving voltages were applied. The deflection measurements and their voltage dependence are shown, together with: structure design and realization, a deformation analysis and the performance highlighted as a micro-displacements actuator.

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“…[3][4][5][6] Softer hysteresis with lower P r and coercive field ͑E c ͒ occurs for rhombohedral compositions ͑x , 0.47͒. [2][3][4][6][7][8] Rhombohedral compositions thus have the advantage of lower switching fields. 3 In the preparation of PZT thin films by various deposition techniques, it has been reported that the ease of nucleation of the perovskite structure improves with Ti addition.…”

Section: Introductionmentioning

confidence: 99%

Influence of texture on the switching behavior of Pb(Zr_0.70Ti_0.30)O₃ sol-gel derived thin films

Brooks¹,

Klissurska²,

Moeckli³

et al. 1997

J. Mater. Res.

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Rhombohedral Pb(Zr 0.70 Ti 0.30 )O 3 thin films of four different well-defined textures, namely, (100), (111), bimodal (110)͞(111), and (100)͞(111), were prepared by a sol-gel method. The films were characterized in terms of grain size, presence of second phases, surface roughness, columnarity of grains, and other microstructural features. The dielectric, ferroelectric, and fatigue properties were investigated, with emphasis on the hysteresis switching characteristics. Results are discussed from the reference point of the allowable spontaneous polarization directions available for the different textures. The values of coercive field, remanent and saturation polarization, and slope of the loop at the coercive field, at saturating fields can be qualitatively explained based on the texture, independent of microstructural differences. The occurrence of surface pyrochlore, however, is observed to affect the functionality of the saturation curves, particularly for the samples of bimodal texture. Shearing of the hysteresis curves of the bimodal films is also attributed to surface microstructural features. The occurrence of nonswitching 71± or 109 ± domains in the (111) and (110)

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Characteristics of ferroelectric 60/40 PZT films deposited by metallo-organic decomposition technology for memory applications

Cited by 11 publications

References 18 publications

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology

Thick-film Piezoelectric Actuators for Micropositioning

Influence of texture on the switching behavior of Pb(Zr_0.70Ti_0.30)O₃ sol-gel derived thin films

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Characteristics of ferroelectric 60/40 PZT films deposited by metallo-organic decomposition technology for memory applications

Cited by 11 publications

References 18 publications

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology

A systematic study on structural and dielectric properties of lead zirconate titanate/(Pb,La)(Zr(1−x)Ti(x))O3 thin films deposited by metallo-organic decomposition technology

Thick-film Piezoelectric Actuators for Micropositioning

Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films

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Product

Resources

About

Influence of texture on the switching behavior of Pb(Zr_0.70Ti_0.30)O₃ sol-gel derived thin films