Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon

Fischer, R.; Henderson, T.; Klem, John F.; Masselink, W. T.; Kopp, W.; Morkoç̌, H.; Litton, C. W.

doi:10.1049/el:19840643

Cited by 81 publications

(7 citation statements)

References 5 publications

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“…Other results of GaAs layers directly on Si [3] and GaAsiAlGaAs MODFET's with extremely high transconductance (175 mS/mm at 300 K and 275 mS/mm at 77K) and with low field 10 K mobilities of 51 000 cm2/V. s were also reported [4]. Very recently, GaAs MESFET's directly on Si substrates with transconductances of about 85 mS/mm [5] which are inferior to those prepared on GaAs substrates were reported.…”

Section: Ue To the Possibilities It Offers Such As Integration Ofmentioning

confidence: 84%

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

Morkoç̌

Peng²,

Henderson³

et al. 1985

IEEE Electron Device Lett.

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High-quality epitaxial films of 2.3-pm-thick GaAs were grown on 3-in-diam(100) Si substrates misoriented by 4 " toward (110). The total morphological defect density observed was (2000 cm-') comparable to what is obtained on a typical GaAs grown on GaAs in this particular MBE process. The electron mobilities and doping levels were 3350 cm'/V.s and 3 x .lo'' ~m -~, which are comparable to GaAs on GaAs of equivalent parameter MESFET's with a A-pm gate lengths, exhibited good saturation and pinch off, no observalsk Eight sensitivity, and transconductances of about 200 mS/mm. These results are believed to be the first report of such excellent MESFET quality GaAs directly grown on Si.

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Section: Ue To the Possibilities It Offers Such As Integration Ofmentioning

confidence: 84%

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

Morkoç̌

Peng²,

Henderson³

et al. 1985

IEEE Electron Device Lett.

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“…50) In 1984, Fischer et al employed a GaAs=GaAlAs superlattice to reduce the dislocation density in GaAs heteroepitaxially grown on a silicon substrate. 51) Umeno's group grew GaAs of good quality on a silicon substrate with an AlP, AlGaP, GaP=GaAs 0.5 P 0.5 , superlattice and a GaAs 0.5 P 0.5 =GaAs superlattice. 52) In their case, the superlattice consisted of layers with different lattice constants, which induced a strain in the layers.…”

Section: Utilization Of a Superlatticementioning

confidence: 99%

Progress in art and science of crystal growth and its impacts on modern society

Nishinaga¹

2015

Jpn. J. Appl. Phys.

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The impacts of the progress in the art and science of crystal growth on human life are reviewed. Even before the invention of the transistor, quartz and corundum crystals were used as crystal oscillators and jewel bearings, respectively. However, a major impact of crystal growth on society was experienced with the invention of the transistor, which required high-purity and perfect germanium crystals. Once the importance of crystal growth was clearly recognized, the science of crystal growth also extensively developed. The growth of single crystalline silicon allows us to produce integrated circuits, which are used in all the electronic devices in everyday use. The technological developments in the growth of compound semiconductors have also had a large impact on society through the inventions of the laser diode for optical communication and the p-n junction nitride light-emitting diode toward the realization of a less energy-intensive society. The latter invention was awarded the 2014 Nobel Prize in Physics. Finally, future aspects of crystal growth are discussed.

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“…Heterogeneous integration of compound semiconductor devices onto Si CMOS offers the promise of integrated circuits (IC's) with enhanced performance as well as microsystems with new functions beyond CMOS. Despite large mismatches in lattice constant and coefficient of thermal expansion (1), a variety of III-V compound semiconductors have been epitaxially deposited directly on the Si substrate by incorporating buffer layers that control dislocations in the active device layers (2)(3)(4)(5). This allows for mixed integration III-V devices on the same level as the Si CMOS transistors.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Heterogeneous Integration of Ultra-Thin Sheets of Alternative Materials onto Silicon Substrates

et al. 2012

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Electric-field-assisted assembly is used to position ultra-thin, micron-sized sheets of alternative materials in high density arrays on silicon substrates. Dielectrophoretic forces induced on the solution-suspended polarizable sheets by a spatially varying, non-uniform electric field attract and align the sheets to lithographically defined assembly electrodes on the substrate. Studying the assembly of 10 µm long, 100 nm thick chromium sheets fabricated in three different widths of 1.2, 2.4, and 3.0 µm showed that the maximum array density decreases with increasing width. This result provides insight into the assembly of sheets composed of doped semiconductor device layers and junctions.

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Characteristics of GaAs/AlGaAs MODFETs grown directly on (100) silicon

Cited by 81 publications

References 5 publications

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

Progress in art and science of crystal growth and its impacts on modern society

(Invited) Heterogeneous Integration of Ultra-Thin Sheets of Alternative Materials onto Silicon Substrates

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