High-quality GaAs MESFET's grown on Silicon substrates by molecular-beam epitaxy

Morkoç̌, H.; Peng, C. K.; Henderson, T.; Kopp, W.; Fischer, R.; Erickson, L. P.; Longerbone, M.; Youngman, R.

doi:10.1109/edl.1985.26162

Cited by 39 publications

(6 citation statements)

References 8 publications

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“…The insight gained from studying this material could aid the conception and optimization of other hetero-epitaxial systems. The APB problem has been fairly successfully resolved by the use of misoriented Si substrates in conjunction with high-temperature pre-bake treatment [36][37][38]. Beginning with a 4-6°o ffcut Si substrate tilted toward the [110] direction, single atomic steps tend to reorganize into energetically more stable double steps under high-temperature annealing conditions [39].…”

Section: Wafer-scale Hetero-epitaxial Growth Of Iii-v Thin Ilms On Simentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

125

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Please note: Changes made as a result of publishing processes such as copy-editing, formatting and page numbers may not be reflected in this version. For the definitive version of this publication, please refer to the published source. You are advised to consult the publisher's version if you wish to cite this paper.This version is being made available in accordance with publisher policies. See http://orca.cf.ac.uk/policies.html for usage policies. Copyright and moral rights for publications made available in ORCA are retained by the copyright holders. U N C O R R E C T E D P R O O F ARTICLE INFO ABSTRACTMonolithic integration of III-V on silicon has been a scientifically appealing concept for decades. Notable progress has recently been made in this research area, fueled by significant interests of the electronics industry in high-mobility channel transistors and the booming development of silicon photonics technology. In this review article, we outline the fundamental roadblocks for the epitaxial growth of highly mismatched III-V materials, including arsenides, phosphides, and antimonides, on (001) oriented silicon substrates. Advances in hetero-epitaxy and selective-area hetero-epitaxy from micro to nano length scales are discussed. Opportunities in emerging electronics and integrated photonics are also presented.

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Section: Wafer-scale Hetero-epitaxial Growth Of Iii-v Thin Ilms On Simentioning

confidence: 99%

Epitaxial growth of highly mismatched III-V materials on (001) silicon for electronics and optoelectronics

Lau

2017

Progress in Crystal Growth and Characterization of Materials

125

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“…It is well known that the use of offcut Si substrates with various angles from 4° to 7° is effective in suppression of the formation of APBs [100][101][102][103]. As mentioned in Section 2.1, the monatomic steps of the Si(001) surface consist of two alternating (2 × 1) and (1 × 2) dimerization.…”

Section: Offcut Silicon Substratesmentioning

confidence: 99%

Heteroepitaxial Growth of III-V Semiconductors on Silicon

et al. 2020

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Monolithic integration of III-V semiconductor devices on Silicon (Si) has long been of great interest in photonic integrated circuits (PICs), as well as traditional integrated circuits (ICs), since it provides enormous potential benefits, including versatile functionality, low-cost, large-area production, and dense integration. However, the material dissimilarity between III-V and Si, such as lattice constant, coefficient of thermal expansion, and polarity, introduces a high density of various defects during the growth of III-V on Si. In order to tackle these issues, a variety of growth techniques have been developed so far, leading to the demonstration of high-quality III-V materials and optoelectronic devices monolithically grown on various Si-based platform. In this paper, the recent advances in the heteroepitaxial growth of III-V on Si substrates, particularly GaAs and InP, are discussed. After introducing the fundamental and technical challenges for III-V-on-Si heteroepitaxy, we discuss recent approaches for resolving growth issues and future direction towards monolithic integration of III-V on Si platform.

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“…If properly baked, this surface is reconstructed, exhibiting mostly double layer, in many cases D A -like steps. For MBE growth, up to now, mainly vicinal Si(001) surfaces, which are offcut by 4 or 6 in one of the h110i directions, respectively, were used [67][68][69][70][71][72]. In this study, similar annealing conditions to those mentioned above were applied.…”

Section: Si Surface Preparationmentioning

confidence: 99%