Growth of III/Vs on Silicon

Volz, Kerstin; Stolz, W.; Dadgar, A.; Krost, A.

doi:10.1016/b978-0-444-63304-0.00031-7

Cited by 10 publications

(3 citation statements)

References 201 publications

(277 reference statements)

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“…growth temperature, Si purity, and Si substrate thickness [79]. To reduce the dislocation density, it is crucial to optimize the AlN seeding layer and AlGaN-based buffer layers [80,81]; the use of an in situ deposited SiN mask and subsequent 3D GaN growth and coalescence is also a promising method.…”

Section: Discussionmentioning

confidence: 99%

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Zhang¹,

Dadgar²,

Palacios³

2018

J. Phys. D: Appl. Phys.

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Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors. Vertical GaN devices are promising candidates for next-generation power electronics in electric vehicles, data centers, smart grids and renewable energy process. The use of low-cost foreign substrates such as silicon (Si) substrates, instead of the expensive free-standing GaN substrates, could greatly trim material cost and enable large-diameter wafer processing while maintaining high device performance. This review illustrates recent progress in material epitaxy, device design, device physics and processing technologies for the development of vertical GaN power devices on low-cost foreign substrates. Although the device technologies are still at the early stage of development, state-of-the-art vertical GaN-on-Si power diodes have already shown superior Baliga's figure of merit than commercial SiC and Si power devices at the voltage classes beyond 600 V. Furthermore, we unveil the design space of vertical GaN power devices on native and different foreign substrates, from the analysis of the impact of dislocation and defects on device performance. We conclude by identifying the application space, current challenges and exciting research opportunities in this very dynamic research field.

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Section: Discussionmentioning

confidence: 99%

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Zhang¹,

Dadgar²,

Palacios³

2018

J. Phys. D: Appl. Phys.

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220

120

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“…Although quasi epitaxial growth of TiN thin films was reported for both Silicon and c-cut sapphire substrates, 31,37 there is a lack of experimental evidence to clarify the specific nature and properties of the grown microstructures. The high relevance of microstructural effects in TiN is underpinned by studies reporting a total loss of SC for films thinner than 40 nm.…”

Section: Introductionmentioning

confidence: 99%

“…Although quasi epitaxial growth of TiN thin films was reported for both Silicon and c- cut sapphire substrates, , there is a lack of experimental evidence to clarify the specific nature and properties of the grown microstructures. The high relevance of microstructural effects in TiN is underpinned by studies reporting a total loss of SC for films thinner than 40 nm. , Most studies are limited by being confined to macroscopic characterization methods like resistivity and X-ray diffraction (XRD) techniques, which allow for functional assessment of the as-grown films, but provide an incomplete picture of the deposited thin films.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Conductivity and Microstructure in Highly Textured TiN_1–x/c-Al₂O₃ Thin Films

et al. 2022

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Titanium nitride thin films are used as an electrode material in superconducting (SC) applications and in oxide electronics. By controlling the defect density in the TiN thin film, the electrical properties of the film can achieve low resistivities and a high critical temperature (T c ) close to bulk values. Generally, low defect densities are achieved by stoichiometric growth and a low grain boundary density. Due to the low lattice mismatch of 0.7%, the best performing TiN layers are grown epitaxially on MgO substrates. Here, we report for the first time a T c of 4.9 K for ultrathin (23 nm), highly textured (111), and stoichiometric TiN films grown on 8.75% lattice mismatch c-cut Al 2 O 3 (sapphire) substrates. We demonstrate that with the increasing nitrogen deficiency, the (111) lattice constant increases, which is accompanied by a decrease in T c . For highly N deficient TiN thin films, no superconductivity could be observed. In addition, a dissociation of grain boundaries (GBs) by the emission of stacking faults could be observed, indicating a combination of two sources for electron scattering defects in the system: (a) volume defects created by nitrogen deficiency and (b) defects created by the presence of GBs. For all samples, the average grain boundary distance is kept constant by a miscut of the c-cut sapphire substrate, which allows us to distinguish the effect of nitrogen deficiency and grain boundary density. These properties and surface roughness govern the electrical performance of the films and influence the compatibility as an electrode material in the respective application. This study aims to provide detailed and scale-bridging insights into the structural and microstructural response to nitrogen deficiency in the c-Al 2 O 3 /TiN system, as it is a promising candidate for applications in state-of-the-art systems such as oxide electronic thin film stacks or SC applications.

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GaN‐On‐Si Epitaxy

Dadgar

2019

Digital Encyclopedia of Applied Physics

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The wide‐bandgap semiconductor GaN is the enabler for light emitters in the visible to UV spectrum and for energy‐efficient high‐frequency and high‐power electronics. Due to the lack of GaN homosubstrates, GaN is mostly grown on heterosubstrates as sapphire, Si, or SiC by molecular beam epitaxy or in industry by metalorganic chemical vapor‐phase epitaxy. With Si being a low‐cost substrate available in large diameters, low‐cost mass production of GaN devices, especially of GaN electronics, is favorable on silicon. This article summarizes the advantages and difficulties of GaN growth on silicon in general and briefly describes the application for LED and transistor device fabrication.

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Growth of III/Vs on Silicon

Cited by 10 publications

References 201 publications

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Enhanced Conductivity and Microstructure in Highly Textured TiN_1–x/c-Al₂O₃ Thin Films

GaN‐On‐Si Epitaxy

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Growth of III/Vs on Silicon

Cited by 10 publications

References 201 publications

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Enhanced Conductivity and Microstructure in Highly Textured TiN1–x/c-Al2O3 Thin Films

GaN‐On‐Si Epitaxy

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Enhanced Conductivity and Microstructure in Highly Textured TiN_1–x/c-Al₂O₃ Thin Films