Characteristics of high-k gate oxide prepared by oxidation of multi-layered Hf/Zr/Hf/Zr/Hf metal films

Yu, Min‐Teh; Jeong, Sun Young; Lee, H.J.; Roh, Yonghan

doi:10.1016/j.tsf.2007.03.076

Cited by 6 publications

(3 citation statements)

References 18 publications

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“…Yu et al reported that the Zr layer has a higher oxygen concentration than the Hf layer when the Hf/Zr/Hf/Zr multilayered stacks were oxidized, which was explained by the different oxygen solubility in the Hf and Zr layers. 15 It was found that ZrO 2 can be more fully oxidized than HfO 2 , and ZrO 2 has a higher oxygen solubility than HfO 2 .…”

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confidence: 99%

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

Jung

Jang

Cho

et al. 2011

Electrochem. Solid-State Lett.

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This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO2 and HfO2 films using similar precursors and process conditions. After PDA at 6008C, the insulating properties of ZrO2 improved but those of HfO2 deteriorated. The improved insulating properties of ZrO2 were attributed to the negligible increase in the interfa-cial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of HfO2 after PDA at high temperatures were attributed to an abrupt increase in the interfacial layer thickness and the generation of con-ducting paths through the grain boundaries. VC 2011 The Electrochemical Society. [DOI: 10.1149/1.3551460] All rights reserved. Manuscript submitted December 7, 2010; revised manuscript received December 28, 2010. Published February 18, 2011. Both HfO2 and ZrO2 are very promising high-k candidates to replace the traditional SiO2 used for gate oxide applications in the complementary metal-oxide-semiconductor field-effect transistor (CMOSFET). Although ZrO2 has almost identical chemical proper-ties to HfO2, 1 it has not attracted as much attention as HfO2 because of its relatively insufficient thermal stability, which might induc

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confidence: 99%

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

Jung

Jang

Cho

et al. 2011

Electrochem. Solid-State Lett.

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“…This is related to oxygen diffusion through thin Al 2 O 3 layer to the graphene. 19,20) These results indicate that the graphene layer becomes more defective after the Al 2 O 3 layer formation, which accounts for the low carrier mobility in the present FET. The degradation of graphene layer has been reported by another group for the epitaxial graphene on 6H-SiC substrate.…”

Section: Resultsmentioning

confidence: 70%

Investigation of Graphene Field Effect Transistors with Al₂O₃ Gate Dielectrics Formed by Metal Oxidation

Jung

Handa

Takahashi

et al. 2011

Jpn. J. Appl. Phys.

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We propose the epitaxial graphene field-effect transistors (EG-FETs) with Al2O3 gate dielectric formed by metal oxidation on semi-insulating 6H-SiC substrate. The Al2O3 gate dielectric layer was formed by thermally oxidizing a thin Al film at 500 °C in an O2 ambient. The electrical characteristics of EG-FETs with Al2O3 gate dielectric have been investigated, which exhibits p-type behavior with the field effect mobility of 120 cm2 V-1 s-1. After the Al2O3 formation, the FWHM of G' and D peaks in the Raman-scattering spectra increased, indicating degradation of graphene and thereby accounting for the low field effect mobility of the EG-FETs. This finding suggests that the optimization of post growth heat treatments, such as oxidation and metallization, should play a decisive role in tuning the quality of graphene and the performance of the device made thereof.

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“…Hf-Zr mixed high-k oxide films obtained by the oxidation and annealing of multilayered metal films show the improved dielectric constant (k) and the raised crystallization temperature [57]. Comparing with HfO 2 and ZrO 2 gate dielectric, the crystallization temperature of Hf-Zr mixed oxides is raised by more than 200…”

Section: Zr-hf and Zr-si Mixedmentioning

confidence: 99%

Advanced CMOS Gate Stack: Present Research Progress

Zhao

Werner

Taylor

et al. 2012

ISRN Nanotechnology

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The decreasing sizes in complementary metal oxide semiconductor (CMOS) transistor technology require the replacement of SiO 2 with gate dielectrics that have a high dielectric constant (high-k). When the SiO 2 gate thickness is reduced below 1.4 nm, electron tunneling effects and high leakage currents occur which present serious obstacles for device reliability. In recent years, various alternative gate dielectrics have been researched. Following the introduction of HfO 2 into the 45 nm process by Intel in 2007, the screening and selection of high-k gate stacks, understanding their properties, and their integration into CMOS technology have been a very active research area. This paper reviews the progress and efforts made in the recent years for high-k dielectrics, which can be potentially integrated into 22 nm (and beyond) technology nodes. Our work includes deposition techniques, physical characterization methods at the atomic scale, and device reliability as the focus. For most of the materials discussed here, structural and physical properties, dielectric relaxation issues, and projections towards future applications are also discussed.

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Characteristics of high-k gate oxide prepared by oxidation of multi-layered Hf/Zr/Hf/Zr/Hf metal films

Cited by 6 publications

References 18 publications

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

Investigation of Graphene Field Effect Transistors with Al₂O₃ Gate Dielectrics Formed by Metal Oxidation

Advanced CMOS Gate Stack: Present Research Progress

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Characteristics of high-k gate oxide prepared by oxidation of multi-layered Hf/Zr/Hf/Zr/Hf metal films

Cited by 6 publications

References 18 publications

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

Investigation of Graphene Field Effect Transistors with Al2O3 Gate Dielectrics Formed by Metal Oxidation

Advanced CMOS Gate Stack: Present Research Progress

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Investigation of Graphene Field Effect Transistors with Al₂O₃ Gate Dielectrics Formed by Metal Oxidation