2011
DOI: 10.1149/1.3551460
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The Effects of Postdeposition Annealing on the Crystallization and Electrical Characteristics of HfO2 and ZrO2 Gate Dielectrics

Abstract: This study examined the effects of postdeposition annealing (PDA) on the electrical characteristics of atomic layer deposited ZrO2 and HfO2 films using similar precursors and process conditions. After PDA at 6008C, the insulating properties of ZrO2 improved but those of HfO2 deteriorated. The improved insulating properties of ZrO2 were attributed to the negligible increase in the interfa-cial layer thickness and an amorphous to tetragonal phase transformation. In addition, the degraded insulating properties of… Show more

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Cited by 30 publications
(14 citation statements)
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“…Control of the HfO 2 microstructure using the O 2 -and O 3 -based ALD processes Before the O 2 layer seed and multilayer approaches were undertaken, the phase evolution behaviors of the HfO 2 films using the O 2 -and O 3 -based ALD processes were examined via GAXRD, as a function of T PDA . This is in good agreement with the previous report by Cho et al, 13 where the incorporated carbon-related impurities adversely interfered with the crystallization and grain growth of the films into the monoclinic phase, and enhanced the crystallization into the tetragonal phase when the T PDA was high enough. Both as-deposited films showed no notable diffraction peak, except for the peaks originated from the Si substrate (2H $ 55 ), suggesting that both films were amorphous.…”
Section: Resultssupporting
confidence: 93%
“…Control of the HfO 2 microstructure using the O 2 -and O 3 -based ALD processes Before the O 2 layer seed and multilayer approaches were undertaken, the phase evolution behaviors of the HfO 2 films using the O 2 -and O 3 -based ALD processes were examined via GAXRD, as a function of T PDA . This is in good agreement with the previous report by Cho et al, 13 where the incorporated carbon-related impurities adversely interfered with the crystallization and grain growth of the films into the monoclinic phase, and enhanced the crystallization into the tetragonal phase when the T PDA was high enough. Both as-deposited films showed no notable diffraction peak, except for the peaks originated from the Si substrate (2H $ 55 ), suggesting that both films were amorphous.…”
Section: Resultssupporting
confidence: 93%
“…The physical thicknesses of various HfSiO films measured by ellipsometry were $10 nm and $3-8 nm for physical and electrical analysis, respectively. PDA was performed by rapid thermal process (RTP) at temperatures ranging from 400 to 1000 C under N 2 atmosphere for 30 s. Any notable decrease in the film thickness was not observed after PDA for both HfO 2 and HfSiO film, confirmed by the ellipsometry and HRTEM, 16 due to the low impurity concentration, confirmed by Auger electron spectroscopy depth profiles (not shown here), and relatively high density of as-deposited films. The theoretical volumetric shrinkage caused by the transformation of HfO 2 from monoclinic to tetragonal phase is only 3.6%.…”
Section: Introductionmentioning
confidence: 72%
“…Figure 6 shows the leakage current characteristics of the ZrO 2 capacitors formed at various deposition temperatures and thicknesses. 20,23 However, all the films deposited within the ALD window are fully crystallized during the ALD and RTA process. 6(a)-6(c)].…”
Section: Resultsmentioning
confidence: 99%
“…Especially, alkylamido-and cyclopentadienyl-based precursors, such as Zr(NEtMe) 4 and (MeCp) 2 Zr(OMe)Me, are commonly used. [18][19][20] As previously noted, Cp-Zr retains higher thermal stability than alkylamido-based precursors, but there are no reports that describe the correlation between the deposition temperature of Cp-Zr and the properties of the film. For this reason, a mixed alkylamido-cyclopentadienyl zirconium (Cp-Zr) precursor has been recently synthesized to achieve sufficient thermal stability with a high growth rate.…”
Section: Introductionmentioning
confidence: 97%