2007
DOI: 10.1007/s10853-006-1340-9
|View full text |Cite
|
Sign up to set email alerts
|

Characteristics of nanostructure and electrical properties of Ti thin films as a function of substrate temperature and film thickness

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

0
5
0

Year Published

2011
2011
2024
2024

Publication Types

Select...
8
1

Relationship

1
8

Authors

Journals

citations
Cited by 13 publications
(5 citation statements)
references
References 45 publications
0
5
0
Order By: Relevance
“…2d. Suppression of the carrier concentration as the thickness decreases has been observed in many different systems [39][40][41] . This phenomenon may be related to the disorder strength, surface state, band gap narrowing effect 40,42 , etc.…”
Section: Thickness-tuned Sit In a Zero Magnetic Fieldmentioning
confidence: 99%
“…2d. Suppression of the carrier concentration as the thickness decreases has been observed in many different systems [39][40][41] . This phenomenon may be related to the disorder strength, surface state, band gap narrowing effect 40,42 , etc.…”
Section: Thickness-tuned Sit In a Zero Magnetic Fieldmentioning
confidence: 99%
“…The resistivity of thin films is affected by different parameters, such as surface scattering, impurities, grain boundary scattering, film surface roughness, and other parameters (Ref [25][26][27]. At low nitrogen gas flow, the number of nitrogen atoms bonding to the Cr atoms may be not enough and the remainders of Cr atoms act as donors and can provide free electrons.…”
Section: Electrical Resistivitymentioning
confidence: 99%
“…Many researchers have reported on obtaining TiO 2 thin films, using different methods [1][2][3][4][5][6][7]. These extensive studies on TiO 2 , have been due to the importance of these films in variety of applications.…”
Section: Introductionmentioning
confidence: 99%