Characteristics of sputtered Ti1−xAlxN films for storage node electrode barriers

Abstract

Articles you may be interested inEffect of annealing on leakage current in Ba 0.5 Sr 0.5 Ti O 3 and Ba 0.96 Ca 0.04 Ti 0.84 Zr 0.16 O 3 thin films with Pt electrodes Appl. Phys. Lett.Properties of reactive-sputtered Ti 1−x Al x N films for complementary metal-oxide-semiconductor silicon storage node electrode diffusion barriersWe report on the characteristics of sputter-deposited Ti 1Ϫx Al x N ͑TiAlN͒ thin films for storage node electrode barriers of Pt/͑BaSr͒TiO 3 ͑BST͒/Pt metal-insulator-metal ͑MIM͒ capacitors with a comparative study of TiN films. The substrate temperature (T s ) was found to be one of the key factors affecting the properties of TiAlN thin films, i.e., the resistivity of TiAlN is ϳ350 ⍀ cm for high T s deposition ͑ϳ450°C͒ and ϳ1100 ⍀ cm for low T s ͑ϳ100°C͒. The lower resistivity of TiAlN films deposited at high T s ͑450°C͒ is attributed to the ͑200͒ texture with larger grain size and smaller oxygen concentration compared to those prepared at low T s . The electrical characteristics of Pt/BST/Pt MIM capacitors on TiAlN were superior to those on the TiN barrier in terms of smaller equivalent oxide thickness (t ox ), lower tangent ␦, and lower leakage current. Better oxidation resistance of TiAlN over TiN appears to be responsible for the better electrical results, especially with the ͑111͒ or ͑200͒ texture. We also discuss a BST bulge and local thinning due to the Pt deformation on TiAlN over an anneal of 600°C in O 2 , resulting in leakage current degradation of the BST MIM capacitor.

Chemical bonding states and solar selective characteristics of unbalanced magnetron sputtered TixM1−x−yNyfilms

“…The formation of h-AlN in Ti 0.25 Al 0.2 N 0.5 and simultaneous formation of h-AlN and h-Si 3 N 4 in Ti 0.25 Al 0.2 Si 0.05 N 0.5 suggests characteristic evidence of spinodal decomposition in these lms through the addition of these elements to TiN. This type of spinodal decomposition of TiAlN reported in previous studies 44,45 is also associated with the grain renement and modications of microstresses within AlN and Si 3 N 4 domains.…”

Microstructural evolution of nanostructured Ti0.9Al0.1N prepared by reactive ball-milling

“…It has been reported that (Ti,Al)N coating can be used as the storage node electrode barriers for the fabrication of high-density CMOS memory devices [22][23][24][25]. As the alternative material to TiN, (Ti,Al)N can also be applied as the upper electrode for dynamic random access memory (DRAM) devices [26].…”

Oxidation Behavior and Mechanisms of TiAlN/VN Coatings

“…Small changes in (Ti + Al)/V ratio changed the exact temperature for the onset of oxidation, with an increase in (Ti + Al)/V increasing the onset temperature, but these changes did not apparently change the mechanism. [23][24][25] The current work provides a comprehensive understanding of the oxidation mechanisms in these coatings for approximately constant (Ti + Al)/V. Although not the focus of the study, oxidation kinetic data are included for TiN and TiAlN coatings as well, to provide a baseline.…”