We describe the effect of eddy currents flowing through a silicon substrate and a grounded metal plate on the characteristics of spiral inductors fabricated using complementary metal–oxide–semiconductor technology. The S-parameters of the spiral inductors on silicon-on-metal (SoM) and silicon-on-quartz (SoQ) are measured. The quality factor and inductance of the spiral inductor on SoM decrease as silicon substrate thickness decreases, because of an increase in the eddy current flowing through the metal plate. In the case of SoQ, the quality factor and inductance of the spiral inductor decrease as silicon substrate thickness decreases, because of a rapid increase in the eddy current flowing through the metal plate, if the distance between the inductor and the metal plate is shorter than the radius of the spiral inductor. Otherwise, the quality factor and inductance are almost constant for various substrate thicknesses, because of the small eddy current flowing through the metal plate.