Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node

Kushwaha, Pragya; Agarwal, Harshit; Lin, Yen-Kai; DasGupta, Anirvan; Kao, Ming-Yen; Lü, Ye; Yue, Yun; Chen, Xiaonan; Wang, Joseph; Sy, Wing; Yang, Frank; Chidambaram, Pr. Chidi; Salahuddin, Sayeef; Hu, Chenming

doi:10.1109/led.2019.2911614

Cited by 35 publications

(17 citation statements)

References 13 publications

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“…However, in experimental validation, the Power Spectrum Density (PSD) results were shown only at 1k Hz without analysis on different biasing conditions, and the traps were assumed uniformly distributed in space and energy level. In reality, the traps are not uniformly distributed within energy and space, which results in 1/f γ noise behavior rather than 1/f [14], [15]. As reported from [8], the measured LFN slope γ was 0.68 from the BC MOSFET noise spectrum.…”

Section: Introductionmentioning

confidence: 82%

1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

Shi

Yuan

2020

IEEE J. Electron Devices Soc.

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The Low Frequency Noise (LFN) in MOSFETs is critical to Signal-to-Noise Ratio (SNR) demanding circuits. Buried Channel (BC) MOSFETs are commonly used as the source-follower transistors for CCDs and CMOS image sensors (CIS) for lower LFN. It is essential to understand the BC MOSFETs noise mechanism based on trap parameters with different transistor biasing conditions. In this paper, we have designed and fabricated deep BC MOSFETs in a CIS-compatible process with 5 V rating. The 1/f γ LFN is found due to non-uniform space and energy distributed oxide traps. To comprehensively explain the BC MOSFETs noise spectrum, we developed a LFN model based on the Shockley-Read-Hall (SRH) theory with WKB tunneling approximation. This is the first time that the 1/f γ LFN spectrum of BC MOSFET has been numerically analyzed and modeled. The Random Telegraph Signal (RTS) amplitudes of each oxide traps are extracted efficiently with an Impedance Field Method (IFM). Our new model counts the noise contribution from each discretized oxide trap in oxide mesh grids. Experiments verify that the new model matches well the noise power spectrum from 10 to 10k Hz with various gate biasing conditions from accumulation to weak inversion. INDEX TERMS Low frequency noise (LFN), buried channel (BC) MOSFET, oxide trap, random telegram signal (RTS), impedance field method (IFM).

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Section: Introductionmentioning

confidence: 82%

1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

Shi

Yuan

2020

IEEE J. Electron Devices Soc.

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“…Thus, for a ∆ω component, 1 is a periodically (T 0 ) modulated rms value of flicker current noise (unit: A/ √ Hz) and γ is an initial random phase. It is quite difficult to give an analytical expression of I 1/f,rms (t) in short-channel devices [1], [2], so it significantly limits quantitative analysis of flicker noise upconversion in advanced CMOS technology. As a remedy, we introduce a testbench of I 1/f,rms (t) shown in Fig.…”

Section: Flicker Noise Upconversion a Nature Of Cyclostationary mentioning

confidence: 99%

“…A S the CMOS technology advances, the flicker (1/f ) noise upconversion in oscillators has become a serious issue due to the increasingly worsening intrinsic 1/f noise in MOS transistors, especially in FinFETs [1] and FD-SOI [2]. At the same time, the emerging applications of 5G/6G wireless communications [3]- [13], high-speed wireline links [14], [15], and quantum computing [16]- [18] all rely on frequency sources of ultra-low phase noise (PN).…”

Section: Introductionmentioning

confidence: 99%

Oscillator Flicker Phase Noise: A Tutorial

Siriburanon

Staszewski

2021

IEEE Trans. Circuits Syst. II

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“…W ITH the CMOS devices scaling down, their worsening 1/ f noise [1], [2] leads to the increase of flicker phase noise (PN) in oscillators. This has become a serious problem, attracting extensive research [3]- [14].…”

Section: Introductionmentioning

confidence: 99%

Flicker Phase-Noise Reduction Using Gate–Drain Phase Shift in Transformer-Based Oscillators

Chen

Siriburanon

et al. 2022

IEEE Trans. Circuits Syst. I

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This article presents a wide-band suppression technique of flicker phase noise (PN) by means of a gate-drain phase shift in a transformer-based complementary oscillator. We identify that after naturally canceling its second-harmonic voltage by the complementary operation itself, third-harmonic current entering the capacitive path is now the main cause of asymmetry in the rising and falling edges, leading to the 1/ f noise upconversion. A complete 1/ f 3 PN analysis for the transformer-based complementary oscillator is discussed. By tuning gate-drain capacitance ratio, a specific phase-shift range is introduced at the gate and drain nodes of the cross-coupled pair to mitigate the detrimental effects of ill-behaved third-harmonic voltage, thus lowering the flicker PN. To further reduce the area and improve the PN in the thermal region, we introduce a new triple-8-shaped transformer. Fabricated in 22-nm FDSOI, the prototype occupies a compact area of 0.01 mm 2 and achieves 1/ f 3 PN corner of 70 kHz, PN of −110 dBc/Hz at 1 MHz offset, figureof-merit (FoM) of −182 dB at 9 GHz, and 39% tuning range (TR). It results in the best FoM with normalized TR and area (FoM TA ) of −214 dB at 1 MHz offset.

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Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology Node

Cited by 35 publications

References 13 publications

1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

1/${f}^{\gamma}$ Low Frequency Noise Model for Buried Channel MOSFET

Oscillator Flicker Phase Noise: A Tutorial

Flicker Phase-Noise Reduction Using Gate–Drain Phase Shift in Transformer-Based Oscillators

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