Characterization and modeling of low-cost, high-performance GaN-Si technology

Limiti, Ernesto; Colangeli, Sergio; Bentini, Andrea; Nanni, Antonio

doi:10.1109/mikon.2012.6233597

Cited by 13 publications

(9 citation statements)

References 8 publications

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“…To accomplish this task, a straightforward approach based on a polynomial approximation of the noise correlation parameters is adopted. This noise modeling approach has already shown to be able to reproduce successfully the behavior of the noise (N-) parameters of microwave GaAs transistors without illumination [27][28][29][30][31][32]. The present study shows that this polynomial-based technique allows modeling N-parameters also under light exposure.…”

Section: Introductionmentioning

confidence: 55%

Black‐box noise modeling of GaAs HEMTs under illumination

Colangeli

Ciccognani

Limiti

et al. 2015

Int J Numerical Modelling

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The present work is focused on the modeling of the noise performance of GaAs HEMTs under laser illumination. The model is straightforwardly extracted by using a polynomial approximation of the noise correlation parameters without the need for determining an equivalent circuit representation. The validity of the model is confirmed by the observed good agreement between model simulations and noise measurements with and without light up to 26GHz

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Section: Introductionmentioning

confidence: 55%

Black‐box noise modeling of GaAs HEMTs under illumination

Colangeli

Ciccognani

Limiti

et al. 2015

Int J Numerical Modelling

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“…Finally, technological assessment was accomplished by the characterization and modeling of a set of monolithic passive components (inductors, capacitors, resistors, and transmission lines). Further details on the modeling of passive components and on a similar sample of active devices can be found in .…”

Section: Fabrication Process and Technology Assessmentmentioning

confidence: 99%

Polynomial noise modeling of silicon‐based GaN HEMTs

Colangeli

Bentini

Ciccognani

et al. 2013

Int J Numerical Modelling

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In the framework of silicon (Si) technology, evolution towards high-frequency analog applicationswhich involves innovative solutions such as SiGe BiCMOS and FinFET deviceswide bandgap semiconductors grown on Si substrates are likely to represent a valid option in those cases wherever high-power handling and low noise figures are required. Although such active devices have been extensively investigated in the last years, much of interest has been devoted in developing nonlinear models for high-power applications, whereas reliable noise models still lack, in particular, the validity of traditional (i.e. equivalent temperature-based) approaches for noise modeling of wide bandgap devices has not been sufficiently probed yet.In this contribution, a quite general, black box noise model of active devices is proposed and applied to a family of gallium nitride-on-Si high-electron-mobility transistors fabricated by Selex ES. The model is based on a polynomial approximation of the device correlation matrix and does not require that an accurate small-signal equivalent circuit is available; instead, it can be extracted from multifrequency source pull data. Experimental results demonstrate that a typical behavior of the noise parameters is obtained, both versus frequency and gate periphery.

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“…However, the reason why SiC is the preferred substrate material for GaN devices resides in its still superior performance: GaN-on-Si devices, indeed, show lower gain and noise behaviors. This is due to different issues, such as the higher Si losses, a lower Si thermal conductivity compared to the SiC one, and the bigger lattice mismatch GaN has with Si respect to SiC, which brings a higher density of impurities and vacancies in the crystalline structure of the devices [11,12].…”

Section: Introductionmentioning

confidence: 99%

Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

et al. 2020

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In this paper a GaN-on-Si MMIC Low-Noise Amplifier (LNA) working in the Ka-band is shown. The chosen technology for the design is a 100 nm gate length HEMT provided by OMMIC foundry. Both small-signal and noise models had been previously extracted by the means of an extensive measurement campaign, and were then employed in the design of the presented LNA. The amplifier presents an average noise figure of 2.4 dB, a 30 dB average gain value, and input/output matching higher than 10 dB in the whole 34–37.5 Ghz design band, while non-linear measurements testify a minimum output 1 dB compression point of 23 dBm in the specific 35–36.5 GHz target band. This shows the suitability of the chosen technology for low-noise applications.

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Characterization and modeling of low-cost, high-performance GaN-Si technology

Cited by 13 publications

References 8 publications

Black‐box noise modeling of GaAs HEMTs under illumination

Black‐box noise modeling of GaAs HEMTs under illumination

Polynomial noise modeling of silicon‐based GaN HEMTs

Design and Validation of 100 nm GaN-On-Si Ka-Band LNA Based on Custom Noise and Small Signal Models

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