Characterization and modeling of materials for photolithographic simulation

Spence, Christopher A.; Ferguson, Richard A.; Neureuther, Andrew R.; Oldham, W.G.

doi:10.1016/0038-1101(90)90174-d

Cited by 6 publications

(2 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The DUV resists were initially negative tone and FTIR measurements allowed cross-linking models to be developed by Rich Ferguson [22]. Silylation models were also developed by Chris Spence based on FTIR measurements [23]. For positive DUV resists the exposed area or trench always grew with additional bake time regardless of the feature type and was modeled with exposure enhanced diffusion by Marco Zuniga [24].…”

Section: Simulation Builds the Physical Foundationmentioning

confidence: 99%

If it moves, simulate it!

Neureuther

2008

Optical Microlithography XXI

View full text Add to dashboard Cite

In the last 35 years modeling of projection printing has undergone many paradigm shifts in physical models, computational engines, algorithms and opportunities. The trigger event for the first quantitative positive resist Dill model was the development and application of automated thin-film measurement equipment. The use of partial coherence which helps imaging also complicates the understanding and necessitates the use of simulation to guide lithography practice. Simulation has also played an important role in discovery (intensity imbalance in phase-shifting masks), invention (self-interferometric mask monitors) and creation of analysis techniques (first-cut accurate fast-CAD). The current challenges and growth areas for simulation include calibration, synergy with metrology, electronic self-testing and linking circuit design and fabrication.

show abstract

Section: Simulation Builds the Physical Foundationmentioning

confidence: 99%

If it moves, simulate it!

Neureuther

2008

Optical Microlithography XXI

View full text Add to dashboard Cite

show abstract

“…Since the mid-1980s, a number of advances have been made, particularly: 1) in the area of new physical conditions, such as for high NA situations [43]- [46], [25], which involves the inherent vector propagation of electromagnetic radiation [47], [48]; 2) the very significant advances in numerical methods, such as enabling 3-D solutions over nonplanar topographies [33], [35] for tackling "reflective notching" problems; and 3) the characterizations of new photoresist chemistries [49], [50], [1] and optical conditions [51], [52]. Regarding 3), new photoresist materials and processes were developed, such as negative, silylated, and chemically amplified photoresists, 1 all requiring new simulation models and capabilities.…”

Section: B More Recent Developments In Microlithography Simulationmentioning

confidence: 99%