Characterization and optimization of a plasma doping process using a pulsed RF-excited B2H6 plasma system

2010 International Workshop on Junction Technology Extended Abstracts

Wang

et al. 2010

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Electron holography, as a powerful method for two-dimensional (2D) doping profiling, is used to study 2D cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line 11 B implant and B 2 H 6 plasma doping (PLAD). It has been found that B 2 H 6 PLAD with -6kV voltage and 2×10 16 /cm 2 dose shows slightly deeper junction depth x j , both of the vertical x j (V), and lateral x j (L) and with slightly larger x j (L)/x j (V) ratio, than beam-line 11 B implant with 2keV energy and 5×10 15 /cm 2 dose. RTP process with 995ºC/20s condition demonstrates higher thermal budget than 1015ºC/spike condition -cause deeper x j , but with a similar x j (L)/x j (V) ratio. Good correlations among 2D Electron Holography dopant profiles, 2D dopant profile simulations, and 1D SIMS/ARXPS B profiles have been demonstrated. Very good correlation between 2D Electron Holography doping profiles and device parameters has been demonstrated.

Section: Experiments Results and Discussionmentioning

confidence: 99%

Two-dimensional cross-sectional doping profiling of boron-based low energy high dose ion implantations using Electron Holography technique

2010 International Workshop on Junction Technology Extended Abstracts

Wang

et al. 2010

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“…The PLAD system is a pulsed, RF-excited continuous plasma-doping system, described in detail elsewhere [9]. Poly gate is 70nm in-situ P-doped poly-Si film.…”

Section: Experiments and Discussionmentioning

confidence: 99%

Two-Dimensional Cross-Sectional Doping Profile Study of Low Energy High Dose Ion Implantations Using High Vacuum Scanning Spreading Resistance Microscopy (HV-SSRM) and Electron Holography

AIP Conference Proceedings

McTeer

et al. 2011

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Comparison of two-dimensional carrier profiles in metal-oxide-semiconductor field-effect transistor structures obtained with scanning spreading resistance microscopy and inverse modeling Abstract. High vacuum scanning spreading resistance microscopy (HV-SSRM) and electron holography (EH) methods are used to study two-dimensional (2D) cross-sectional doping profiles of low energy high dose ion implantations including conventional beam-line 75 As implant and AsH 3 plasma doping (PLAD). Both methods show quantitative definition of junction depths x j in vertical and lateral directions, and have been demonstrated to be powerful techniques for 2D doping profiling study. It has been found that AsH 3 PLAD with -10kV voltage and 1×10 16 /cm 2 dose shows slightly deeper junction depth x j , both of vertical x j (V) and lateral x j (L) and with slightly larger x j (L)/x j (V) ratio than beam-line 75 As implant with 10keV energy and 8×10 15 /cm 2 dose. Good correlations among 2D HV-SSRM doping profiles, 2D EH doping profiles, 2D doping profile simulation, and 1D SIMS/ARXPS As profiles have been demonstrated. Very good correlation between 2D doping profiles and device parameters has been demonstrated.

“…The process conditions of the conventional beam-line ion implantation were as follows: Ion species was 11 B + , energy was 2 keV, dose was 5 × 10 15 /cm 2 , and implant angle was 0 • . The PLAD system was a continuous RF-excited pulsed PLAD system described in detail elsewhere [12]. The PLAD process conditions were as follows: The doping gas was B 2 H 6 (Diborane), and the nominal implant voltage and dose were −6 kV and 2 × 10 16 /cm 2 , respectively.…”

Section: Experiments and Discussionmentioning

confidence: 99%

“…However, PLAD shows a slightly higher (∼2%) average mobility because PLAD has less damage than that of beamline implant, although this slight difference is within the measurement error of the CAOT/DHE technique. It was attributed to the fact that PLAD has no direct ion bombardments on the Si substrate because B 2 H 6 PLAD has B deposition during implant [12]. These higher B and hole concentrations near the Si surface with higher carrier dose and slightly higher average mobility of the PLAD process are attributed to an improved device performance than those processed by beam-line implant, including much lower SD contact resistance, lower SD sheet resistance, and higher drive current and transconductance [15].…”

Section: Experiments and Discussionmentioning

confidence: 99%

Study of Low-Energy Doping Processes Using Continuous Anodic Oxidation Technique/Differential Hall Effect Measurements

IEEE Trans. Plasma Sci.

Prussin

Reyes

et al. 2009

Comparing with conventional spreading resistance profiling and differential Hall effect (DHE) methods, the continuous anodic oxidation technique/DHE (CAOT/DHE) technique may achieve more reasonable profiles of carrier concentration n h (x), mobility μ h (x), and resistivity ρ(x) and more reasonable carrier dose and x j in Si substrate. It has been successfully used to study ultralow energy doping techniques including B beam-line implant and B 2 H 6 plasma doping (PLAD). CAOT/DHE data support the fact that the devices fabricated by PLAD achieve improvement to those fabricated by beam-line implant because PLAD offered higher surface carrier concentration and carrier dose. CAOT/DHE data quantitatively verify the so-called solid solubility limit activation theory-the carrier profiles and secondary ion mass spectrometry (SIMS) B impurity profiles under B SS are very well consistent on both beam-line and PLAD implants. As a cheaper and standard metrology, the SIMS/ARXPS method with the solid solubility limit activation theory may be used to quantitatively or semiquantitatively study the doping and activation processes.Index Terms-Carrier and mobility profiles, continuous anodic oxidation technique/differential Hall effect (CAOT/DHE), plasma doping (PLAD), spreading resistance profiling (SRP).