Proceedings of International Electron Devices Meeting
DOI: 10.1109/iedm.1995.499312
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Characterization and optimization of NO-nitrided gate oxide by RTP

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Cited by 3 publications
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“…The distortion of the nitrate process will influence the lifetime of the device produced from that wafer. The annealing time or the temperature used during the nitrate layering process can also be used to vary the resilience to HCI [9], [26].…”
Section: Hci Trojanmentioning
confidence: 99%

Hardware Trojan by Hot Carrier Injection

Shiyanovskii,
Wolff,
Papachristou
et al. 2009
Preprint
“…The distortion of the nitrate process will influence the lifetime of the device produced from that wafer. The annealing time or the temperature used during the nitrate layering process can also be used to vary the resilience to HCI [9], [26].…”
Section: Hci Trojanmentioning
confidence: 99%

Hardware Trojan by Hot Carrier Injection

Shiyanovskii,
Wolff,
Papachristou
et al. 2009
Preprint