Characterization and reduction of copper chemical-mechanical-polishing-induced scratches

Teo, Tai Yong.; Goh, Wang Ling; Leong, Lup San; Lim, V.; Tse, Tak Yan; Chan, Lap

doi:10.1117/12.485223

Cited by 5 publications

(2 citation statements)

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“…Teo et al [44] characterized the scratches generated during Cu CMP as a function of process pressure and velocity with different abrasive particles. In their results, scratches generated on the Cu surface were classified into two types, long scratches and triangular scratches.…”

Section: High Particle Concentration and Agglomerated Particlesmentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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Chemical mechanical planarization (CMP) has become one of the most critical processes in semiconductor device fabrication to achieve global planarization. To achieve an efficient global planarization for device node dimensions of less than 32 nm, a comprehensive understanding of the physical, chemical, and tribo-mechanical/chemical action at the interface between the pad and wafer in the presence of a slurry medium is essential. During the CMP process, some issues such as film delamination, scratching, dishing, erosion, and corrosion can generate defects which can adversely affect the yield and reliability. In this article, an overview of material removal mechanism of CMP process, investigation of the scratch formation behavior based on polishing process conditions and consumables, scratch formation mechanism and the scratch inspection tools were extensively reviewed. The advantages of adopting the filtration unit and the jet spraying of water to reduce the scratch formation have been reviewed. The current research trends in the scratch formation, based on modeling perspective were also discussed.

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Section: High Particle Concentration and Agglomerated Particlesmentioning

confidence: 99%

Scratch formation and its mechanism in chemical mechanical planarization (CMP)

2013

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“…Also, the correlation between LPC in fused silica slurries and scratch formation during CMP were established. Teo et al 22 characterized the scratches generated during Cu CMP as a function of process pressure and velocity with different abrasive particles. They also found that deeper scratches were detected when larger and harder abrasive particles were used for Cu CMP and the occurrence of scratches was increased due to the agglomeration of the abrasive particles.…”

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confidence: 99%

Role of Dispersant Agent on Scratch Reduction during Copper Barrier Chemical Mechanical Planarization

Liu

Wang

et al. 2018

ECS J. Solid State Sci. Technol.

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The chemical mechanical planarization (CMP) has been one of the major manufacturing process to provide global and local surface planarizations in integrated circuits (IC) fabrications. Defects such as micro-scratches generated during CMP can lead to severe circuit failure, which affects yield. In the present work, ethoxylated decylalchohol (EDA) was used as dispersant agent to prevent the particles agglomeration to reduce scratches. Firstly, the effect of EDA on particle size distribution (PSD) of the slurry was investigated by dynamic light scattering (DLS) method. Then the effect of EDA on large particle counts (LPC) was studied through a dual sensor single particle optical sensing (SPOS) analysis method. The wetting ability of slurries as a function of EDA concentration was also studied. Finally, the defect scan tool and scanning electron microscope (SEM) reviewer were used to identify the scratch defects. The results show that the addition of EDA into the slurry can enhance the dispersity of colloidal silica abrasives and significantly reduce the number of large particles in the slurry, the SEM review results show that the scratch counts remarkably decreases with EDA concentration increasing. It can be demonstrated that the EDA can effectively reduce the scratch counts.

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