Characterization by X-Ray Diffraction of Non- &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;$c$&lt;/tex-math&gt; &lt;/inline-formula&gt;-Axis Epitaxial &lt;inline-formula&gt; &lt;tex-math notation="LaTeX"&gt;${Bi}_{2}{Sr}_{2}{CaCu}_{2}{O}_{8+\delta}$&lt;/tex-math&gt; &lt;/inline-formula&gt; Thin Films

Endo, Kazuhiko; Arisawa, Shunichi; Kaneko, Takeaki; Tsuyumoto, Isao; Tateno, Yasushi; Badica, P.

doi:10.1109/tasc.2016.2529005

Cited by 4 publications

(8 citation statements)

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“…Impurity orientations (110) and (119) show a relatively convenient matching relationship with the (110) plane of the substrate, as explained in ref. [17]. The presence of the (001) impurity orientation, not matching the substrate, is perhaps a consequence of the high mobility of the adatoms at high temperatures and of the crystal chemistry of the Bi-2212 phase.…”

Section: Resultsmentioning

confidence: 99%

“…When growth conditions are fixed, less impurity orientations are found for the non c -axis films grown on LAO than for the films deposited on STO. This might be due to lower values of the mismatch coefficients for LAO than for STO; along [001] and [110] directions of the (110) substrate, the mismatch values are 0.98% and 8.95% for LAO [17] and 3.88% and 11.63% for STO.…”

Section: Resultsmentioning

confidence: 99%

“…For a fixed ψ within (−85°, 85°), the φ -scan was measured. Other details of the φ - ψ scan methodology are described elsewhere [17].…”

Section: Methodsmentioning

confidence: 99%

“…Films orientation is controlled by selecting appropriate substrates with a suitable film-substrate lattice matching relationship. In our previous works we have grown c -axis and non c -axis HTS films on different substrates [17]. The layer-by-layer growth of (117) Bi2212 films by Molecular Organic Chemical Vapor Deposition (MOCVD) on flat substrates was demonstrated to generate twinned films.…”

Section: Introductionmentioning

confidence: 99%

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Epitaxial Non c-Axis Twin-Free Bi2Sr2CaCu2O8+δ Thin Films for Future THz Devices

2019

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Thin films of (117) Bi2Sr2Ca2CuO8+δ (Bi-2212) were grown by Molecular Organic Chemical Vapor Deposition (MOCVD) on (110) SrTiO3 and (110) LaAlO3 substrates. Substrates were vicinal with off angles up to 20°. Films are 3D epitaxial and X-ray diffraction φ-ψ scans demonstrate that, while the films grown on a flat substrate are composed of twinned grains, the films on vicinal substrate are twin-free. A higher quality is obtained if growth is performed at two temperatures: Growth starts at 550–600 °C and continues at 700–750 °C. The twin-free film grown by the two-temperature method shows a zero-resistance critical temperature of 37 and 32 K when the measuring current is applied in-plane parallel and perpendicular to [001] direction of the substrate. Twin-free non c-axis thin films are promising for fabrication of novel planar THz devices.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…For a fixed ψ within (−85°, 85°), the φ -scan was measured. Other details of the φ - ψ scan methodology are described elsewhere [17].…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Epitaxial Non c-Axis Twin-Free Bi2Sr2CaCu2O8+δ Thin Films for Future THz Devices

2019

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“…23,24 However, all of these are vacuum processes such as ion beam sputtering, 5,9,14 molecular beam epitaxy, 6,11,23 atomic layer epitaxy, 10 RF magnetron sputtering, 15,16 DC magnetron sputtering, 17 and metal organic chemical vapor deposition. [18][19][20][21][22]24 If it is possible to prepare non-c-axis oriented thin films by a solution method, planar type IJJ devices can be fabricated by a simple process such as heat treatment after applying solution by a printing method. The metal-organic decomposition (MOD) is a kind of chemical solution deposition method which is an attractive fabrication technology in terms of cost and simplicity.…”

Section: Introductionmentioning

confidence: 99%

Preparation of (11n) oriented Bi2Sr2CaCu2O8+x thin films without c-axis twin structure by the metal-organic decomposition method using vicinal SrTiO3 (110) substrates

et al. 2018

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ARTICLES YOU MAY BE INTERESTED INProbing the internal energy structure of a serially coupled double quantum dot system with Rashba spin-orbit coupling through finite-frequency shot noise AIP Advances 8, 015001 (2018) We have prepared (11n) oriented Bi 2 Sr 2 CaCu 2 O 8+x (Bi2212) thin films by metalorganic decomposition method. The vicinal (110) substrate of SrTiO 3 (STO) inclined toward the [110] direction was used for suppressing "c-twinning". In the sample prepared in the O 2 atmosphere, only the (11n) peak appeared in the θ-2θ X-ray diffraction pattern. When the miscut angle of the substrate was ϕ = 10 • , it was shown by the scanning electron microscope images and the (008) pole figures that the c-axis was inclined by about 38 • and the c-twinning was substantially suppressed. ρ ab and ρ c of this sample were calculated by the corrected van der Pauw method and component calculation of the two-dimensional resistivity tensor. The superconducting transition temperatures were T c = 81 K. The temperature dependence of ρ ab was a typical metallic behavior reflecting the characteristics of the ab-plane of Bi2212. On the other hand, that of ρ c did not become a typical semiconductor behavior in the c-axis direction of Bi2212, but it showed a metallic behavior. The anisotropic parameter γ was about 10.

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Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

Presti

Pellegrino

Malandrino

2022

Adv Materials Inter

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Perovskite oxide type materials exhibit a great profusion of unique functional properties and for this reason they have been named inorganic chameleon. Nevertheless, their actual applications require the availability of these systems in thin‐film form synthesized through a simple, scalable, and straightforward technique. Metal‐organic chemical vapor deposition (MOCVD) has been shown to be an outstanding process to prepare thin films of multi‐component oxides. Herein, the focus is devoted to oxide perovskite thin films on both single crystal and non‐single crystal substrates through MOCVD processes. This study discusses the principles and the basic rules governing conventional, plasma‐enhanced, and liquid‐assisted MOCVD processes. Among a plethora of oxide perovskites, several classes of functionalities belonging to the perovskite class: from superconductors to dielectrics and giant‐k dielectrics, from colossal magnetoresistance to ionic conductors, piezoelectrics and ferroelectrics, are explored in detail.

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Characterization by X-Ray Diffraction of Non- <inline-formula> <tex-math notation="LaTeX">$c$</tex-math> </inline-formula>-Axis Epitaxial <inline-formula> <tex-math notation="LaTeX">${Bi}_{2}{Sr}_{2}{CaCu}_{2}{O}_{8+\delta}$</tex-math> </inline-formula> Thin Films

Cited by 4 publications

References 16 publications

Epitaxial Non c-Axis Twin-Free Bi2Sr2CaCu2O8+δ Thin Films for Future THz Devices

Epitaxial Non c-Axis Twin-Free Bi2Sr2CaCu2O8+δ Thin Films for Future THz Devices

Preparation of (11n) oriented Bi2Sr2CaCu2O8+x thin films without c-axis twin structure by the metal-organic decomposition method using vicinal SrTiO3 (110) substrates

Metal‐Organic Chemical Vapor Deposition of Oxide Perovskite Films: A Facile Route to Complex Functional Systems

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