Characterization of 3C-SiC films grown on monocrystalline Si by reactive hydrogen plasma sputtering

Abstract

Detailed characterization using x-ray diffractometry, scanning electron microscopy, transmission electron microscopy, x-ray photoelectron spectroscopy, and Auger infrared and focused ion-beam spectroscopy, was carried out on cubic SiC films grown on single-crystal (100) Si substrates by reactive hydrogen plasma sputtering over a range of growth temperatures between 700 and 1000 °C. It was found that the first few deposited atomic layers were always amorphous. The subsequent SiC films showed well-defined (111) growth at the lowest temperatures, becoming randomly oriented by 1000 °C. The measured C:Si ratio was always >1, and varied with depth inside a film and also with temperature. At higher temperatures, the presence of “hollow voids” was observed, our data being consistent with their formation by outdiffusion of Si atoms from the substrate through the SiC layer. Associated with the hollow voids we observed the presence of a porous, highly C-rich region at the Si–SiC interface. We propose that this was due to diffusion of C from the SiC film into the voids themselves.

Surface nano-structured silicon carbide thin film produced using hot filament decomposition of ethylene at low temperature on silicon wafer

“…In addition, from Fig. 1, the film's homogeneity decreases with increasing temperature also is in agreement with literature works [21,24] and some surface admixtures (compounds of Si with O, C and H) stayed at all applied temperatures.…”

Low‐Temperature PECVD of Nanodevice‐Grade nc‐3C‐SiC

“…High-magnification SEM imaging shows that the film surface is made up of small nanoparticles and the interfacial layer between SiC and Si is clear, uniform, and free from any major defects such as voids or cavities. [21][22] Figure 1d deposited at T s = 450°C. The micrograph confirms the existence of SiC nanocrystallites embedded into an amorphous matrix with a broad variation in crystallite size.…”

Heteroepitaxial growth of cubic SiC on Si using very‐high‐frequency plasma at atmospheric pressure

“…[9,12] To eliminate such defects, it is necessary to find suitable deposition procedures that permit as low substrate temperatures as possible.…”

“…[10] In preparing crystalline 3C-SiC films, low-pressure chemical vapor deposition (LPCVD) and reactive magnetron sputtering are generally used. [8,9,11,12] One of the problems associated with heteroepitaxial 3C-SiC growth on Si is the formation of voids at the film/substrate interface. This is caused by the diffusion of Si atoms from the substrate into the growing film due to the high substrate temperature (>1000…”