Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films

Park, Byeongju; Conti, Richard; Economikos, Laertis; Chakravarti, A.; Ellenberger, James N.

doi:10.1116/1.1396640

Cited by 5 publications

(4 citation statements)

References 11 publications

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“…Unexpectedly, deposition rates decrease at higher flow rates. This response is due to reactor/substrate cooling by injected BTBAS vapor and is similar to that reported by Park et al 7 for deposition of phosphosilicate glass ͑PSG͒ using BTBAS as a silicon precursor. Deposition rate and within-wafer thickness variation trends shown in Fig.…”

Section: Resultssupporting

confidence: 87%

Characterization of Low-Temperature Silicon Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia

Gumpher¹,

Bather

Mehta

et al. 2004

J. Electrochem. Soc.

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Low pressure chemical vapor deposition ͑LPCVD͒ of silicon nitride from bis͑tertiary-butylamino͒silane ͑BTBAS͒ and ammonia precursors has been demonstrated at 550-600°C in a 200 mm vertical batch furnace system. Deposition rates of 4-30 Å/min are achieved with a film thickness variation below 2% 1-sigma. Silicon nitride depositions using BTBAS and NH 3 were found to retain a significant mass-transfer limiting component at temperatures Ͻ600°C. Substantial carbon and hydrogen incorporation are detected in low-temperature BTBAS silicon nitride, relative to dichlorosilane based silicon nitride deposited at higher temperature. These impurities result in the formation of a SiNCH solid solution with carbon substitution of nitrogen and disproportionate occupation of silicon and nitrogen sites by interstitial hydrogen. Optical and physical properties of silicon nitride are significantly altered by the addition of carbon and hydrogen impurities. Etch resistance of BTBAS-derived silicon nitride was found to diminish at elevated hydrogen levels. However, increasing etch resistance is observed in silicon nitride films with higher carbon levels. The data from this study indicate that carbon and hydrogen impurity concentrations may be tuned to produce silicon nitride with specific material properties.

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Section: Resultssupporting

confidence: 87%

Characterization of Low-Temperature Silicon Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia

Gumpher¹,

Bather

Mehta

et al. 2004

J. Electrochem. Soc.

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“…2 SiO 2 has also been deposited by chemical vapor deposition (CVD). [3][4][5][6][7][8][9][10] Some SiO 2 CVD approaches have utilized plasma 11,12 or a NH 3 catalyst. 13 However, CVD is not conformal in high aspect ratio structures and displays void formation in trenches and vias.…”

Section: Introductionmentioning

confidence: 99%

“…High quality SiO 2 has been formed by the thermal oxidation of silicon between 700−900 °C . SiO 2 has also been deposited by chemical vapor deposition (CVD). − Some SiO 2 CVD approaches have utilized plasma , or a NH 3 catalyst . However, CVD is not conformal in high aspect ratio structures and displays void formation in trenches and vias.…”

Section: Introductionmentioning

confidence: 99%

SiO₂ Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy

et al. 2009

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The atomic layer deposition (ALD) of silicon dioxide (SiO 2 ) was initially explored using a variety of silicon precursors with H 2 O as the oxidant. The silicon precursors were (N,N-dimethylamino)trimethylsilane) (CH 3 ) 3 SiN(CH 3 ) 2 , vinyltrimethoxysilane CH 2 dCHSi(OCH 3 ) 3 , trivinylmethoxysilane (CH 2 dCH) 3 SiOCH 3 , tetrakis(dimethylamino)silane Si(N(CH 3 ) 2 ) 4 , and tris(dimethylamino)silane (TDMAS) SiH(N(CH 3 ) 2 ) 3 . TDMAS was determined to be the most effective of these precursors. However, additional studies determined that SiH* surface species from TDMAS were difficult to remove using only H 2 O. Subsequent studies utilized TDMAS and H 2 O 2 as the oxidant and explored SiO 2 ALD in the temperature range of 150-550 °C. The exposures required for the TDMAS and H 2 O 2 surface reactions to reach completion were monitored using in situ FTIR spectroscopy. The FTIR vibrational spectra following the TDMAS exposures showed a loss of absorbance for O-H stretching vibrations and a gain of absorbance for C-H x and Si-H stretching vibrations. The FTIR vibrational spectra following the H 2 O 2 exposures displayed a loss of absorbance for C-H x and Si-H stretching vibrations and an increase of absorbance for the O-H stretching vibrations. The SiH* surface species were completely removed only at temperatures >450 °C. The bulk vibrational modes of SiO 2 were observed between 1000-1250 cm -1 and grew progressively with number of TDMAS and H 2 O 2 reaction cycles. Transmission electron microscopy (TEM) was performed after 50 TDMAS and H 2 O 2 reaction cycles on ZrO 2 nanoparticles at temperatures between 150-550 °C. The film thickness determined by TEM at each temperature was used to obtain the SiO 2 ALD growth rate. The growth per cycle varied from 0.8 Å/cycle at 150 °C to 1.8 Å/cycle at 550 °C and was correlated with the removal of the SiH* surface species. SiO 2 ALD using TDMAS and H 2 O 2 should be valuable for SiO 2 ALD at temperatures >450 °C.

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“…1) Chemical vapor deposition (CVD) is commonly used for SiO 2 growth. [2][3][4][5] To decrease the deposition temperature to as low as 400 °C, the plasma-enhanced CVD (PECVD) method has been used. 6,7) Recently, atomic layer deposition (ALD) methods have become important for precise control of the composition and thickness in order to form the ultrathin SiO 2 films that are becoming necessary as device dimensions shrink, particularly for next generation devices.…”

mentioning

confidence: 99%

Chemical reactions during plasma-enhanced atomic layer deposition of SiO₂ films employing aminosilane and O₂/Ar plasma at 50 °C

Kobayashi²,

Kondo

et al. 2013

Jpn. J. Appl. Phys.

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We report the temporal evolution of surface species observed in situ using attenuated total reflection Fourier transform infrared absorption spectroscopy (ATR-FTIR) during plasma-enhanced atomic layer deposition (PE-ALD) of SiO2 films employing aminosilane and an O2/Ar plasma at a temperature of 50 °C. Reversals in the appearance of IR absorbance features associated with SiO–H, C–H x , and Si–H proved to coincide with the self-limiting reaction property in ALD. Our IR results indicate that an O2/Ar plasma can both removed CH x groups and transform SiH surface species to SiOH. In addition, SiO2 deposition was confirmed by a continuous increase in Si–O absorbance with each PE-ALD step, which becomes stable after several cycles. On the basis of our results, the mechanism of low temperature SiO2 PE-ALD was discussed.

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Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films

Abstract: Articles you may be interested inEffect of low-energy N 2 + ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

Cited by 5 publications

References 11 publications

Characterization of Low-Temperature Silicon Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia

Characterization of Low-Temperature Silicon Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia

SiO₂ Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy

Chemical reactions during plasma-enhanced atomic layer deposition of SiO₂ films employing aminosilane and O₂/Ar plasma at 50 °C

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Characterization of bis(tertiary-butylamino)silane-based low-pressure chemical vapor deposition silicate glass films

Abstract: Articles you may be interested inEffect of low-energy N 2 + ion beam bombardment on silicate glass thin films studied by x-ray photoelectron spectroscopy

Cited by 5 publications

References 11 publications

Characterization of Low-Temperature Silicon Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia

Characterization of Low-Temperature Silicon Nitride LPCVD from Bis(tertiary-butylamino)silane and Ammonia

SiO2 Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy

Chemical reactions during plasma-enhanced atomic layer deposition of SiO2 films employing aminosilane and O2/Ar plasma at 50 °C

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Product

Resources

About

SiO₂ Atomic Layer Deposition Using Tris(dimethylamino)silane and Hydrogen Peroxide Studied by in Situ Transmission FTIR Spectroscopy

Chemical reactions during plasma-enhanced atomic layer deposition of SiO₂ films employing aminosilane and O₂/Ar plasma at 50 °C