Characterization of CuO/n-Si heterojunction solar cells produced by thermal evaporation

Abstract

Copper(II) oxide (CuO) in powder form was evaporated thermally on the front surface of an n-Si (1 0 0) single crystal using a vacuum coating unit. Structural investigation of the deposited CuO film was made using X-ray difraction (XRD) and energy dispersive X-ray analysis (EDX) techniques. It was determined from the obtained results that the copper oxide films exhibited single-phase CuO properties in a monoclinic crystal structure. Transmittance measurement of the CuO film was performed by a UV-Vis spectrophotometer. Band gap energy of the film was determined as 1.74 eV under indirect band gap assumption. Current-voltage (I-V) measurements of the CuO/n-Si heterojunctions were performed under illumination and in the dark to reveal the photovoltaic and electrical properties of the produced samples. From the I-V measurements, it was revealed that the CuO/n-Si heterojunctions produced by thermal evaporation exibit excellent rectifying properties in dark and photovoltaic properties under illumination. Conversion efficiencies of the CuO/n-Si solar cells are comparable to those of CuO/n-Si produced by other methods described in the literature.

Environment-friendly copper-based chalcogenide thin film solar cells: status and perspectives

“…The binary Cu Ch ( Ch = S, Se) compounds have been widely explored as one of the important components in solar cell devices, mainly as inorganic charge-selecting layers or photoactive materials. 6,40–44 As one of the pioneer materials in solar cells, the CuS or CuSe family has been investigated earlier as photoactive materials. The simple fabrication via the solution process of CuS/Se attracts great interest in theoretical and practical applications of thin film solar cells.…”

“…The simple to complex compositions of Cu Ch can be fabricated using various methods, including solution-processed and vacuum techniques with various temperature processes. 6–10 This will give more flexibility to deposit Cu Ch thin film onto various glass substrates, such as glass, plastic, or metal substrates. 4 Cu Ch materials have been used for many optoelectronic device applications, such as photodetectors, light-emitting diodes (LEDs), near-infrared plasmon resonances, biomedical imaging, and biosensors, that can operate in a wide wavelength range from visible to the near-infrared (NIR) due to tuneable bandgaps.…”

Structural, Electrical and Optical Properties of CuO Thin Films Obtained by Reactive Magnetron Sputtering

“…Виготовлення тонких плівок CuO проводилося в універсальній вакуумній установці Leybold-Heraeus L560. Напилювались тонкі плівки CuO методом реактивного магнетронного розпилення при постійному струмі [11,12] на скляні підкладки, температура яких складала (T підкл ): для зразка №1 -300 К та для зразка №2 -523 К. Мідна мішень -шайба діаметром 100мм і товщиною 5мм, розміщується на столику магнетрона з водяним охолодженням на відстані 7см під підкладками. Вакуумна камера має товщину 10 мм і виготовлена з нержавіючої сталі.…”

Ni/n-GaAs ve NiO/n-GaAs Diyotların Elektriksel Parametreleri Arasındaki İlişki

“…NiO ince filmli cihazların üretiminde de birçok teknik kullanılmıştır [15][16][17][18][19][20][21]. Bu çalışmada da p-NiO/n-GaAs p-n heteroeklem diyotları ve Ni/n-GaAs Schottky diyotları termal buharlaştırma yöntemi kullanılarak üretilmiştir [22][23].…”