Characterization of epitaxial BiFeO3 thin films prepared by ion beam sputtering

Nakashima, Seiji; Tsujita, Yosuke; Fujisawa, Hironori; Park, Jung Min; Kanashima, Takeshi; Okuyama, Masanori; Shimizu, Masaru

doi:10.1016/j.cap.2010.11.066

Cited by 9 publications

(5 citation statements)

References 27 publications

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“…31) We have also reported the domain structure control and high-quality thin-film preparation of BFO films by dual ion beam sputtering. [32][33][34] However, the details of the properties of the single-domain BFO films including the epitaxial strain effect have not been investigated yet. On the other hand, the major deposition processes for BFO thin films are pulsed laser deposition 1,10) and chemical solution deposition.…”

Section: Introductionmentioning

confidence: 99%

Influence of Lattice Distortion Induced by a Vicinal SrTiO₃(001) Substrate in Single-Domain BiFeO₃ Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Nakashima

Takada

Seto

et al. 2013

Jpn. J. Appl. Phys.

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Single-domain BFO thin films are prepared on a SrRuO3-buffered SrTiO3 (STO) (001) substrate by RF planar magnetron sputtering. A domain structure is controlled by vicinal direction of the STO substrate. The BFO thin films on vicinal STO along <110> show single-domain structure without any domain walls. To confirm the influence of epitaxial strain on lattice distortion and ferroelectricity, single-domain BFO thin films with thicknesses ranging from 10–1000 nm are prepared. Synchrotron X-ray diffraction reveals that lattice relaxation and step bunching occur in the thickness range of 50–200 nm. The BFO films with thicknesses over 300 nm are almost free from the influence of the epitaxial strain induced by (001)-oriented substrates. The remanent polarization P r is almost constant at about 60 µC/cm2. However, P r slightly increases in the BFO films with thicknesses less than 200 nm. Even the 100-nm-thick BFO film show fully saturated D–E hysteresis at RT, and the P r is 65 µC/cm2.

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Section: Introductionmentioning

confidence: 99%

Influence of Lattice Distortion Induced by a Vicinal SrTiO₃(001) Substrate in Single-Domain BiFeO₃ Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Nakashima

Takada

Seto

et al. 2013

Jpn. J. Appl. Phys.

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“…The BFO thin films were grown by ion beam sputtering, by which we have already demonstrated high-quality BFO thinfilm growth. 25,26) T-BFO and R-BFO mixed-phase thin films of 250 nm thickness were grown on SRO (50 nm)/STO (001) substrate by ion beam sputtering. An Ar + ion beam was generated using a º 3 cm Kaufman ion source (Veeco HC-252).…”

Section: Methodsmentioning

confidence: 99%

Growth and local structure of BiFeO₃thin films with giant tetragonality on SrRuO₃-buffered SrTiO₃(001) substrate by ion beam sputtering

Nakashima¹,

Fujisawa²,

Kobune³

et al. 2014

Jpn. J. Appl. Phys.

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Rhombohedral (R-) and tetragonal-like (T-) BiFeO 3 (BFO) mixed-phase thin films and single R-phase BFO thin films have been grown on SrRuO 3buffered SrTiO 3 (STO) (001) substrate by ion beam sputtering. From X-ray diffraction study, it was found that T-BFO and R-BFO mixed-phase thin films can be grown at a low oxygen partial pressure of 1 mPa, and the lattice parameters of the T-BFO and R-BFO were a = 0.381 nm, c = 0.461 nm (c/a = 1.22), and a = 0.394 nm and c = 0.400 nm (c/a = 1.02), respectively. High-resolution high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) observation and energy dispersive X-ray analysis (EDXA) mappings have revealed a clear T-BFO lattice and a-c domain in the middle of the thin films. However, Bi-rich and Fe-rich secondary phases were also found with the T-BFO phase. Therefore, it can be concluded that secondary phases such as Bi 2 O 3 or Bi-poor phase are needed for T-BFO formation on STO (001) substrate, and the a-c domain formation does not occur by stress relaxation but matching of the growth directions of different domains.

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“…IBS can be generate sputtered particles having higher kinetic energy of more than 10 eV due to high kinetic energy (~1 keV) of the sputtering ions and inclined incidences of sputtering ions to a target. [8,9] In the BFO thin films on SRO/STO, large c/a phase was found, and structural and ferroelectric properties were investigated.…”

Section: Introductionmentioning

confidence: 99%

Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

et al. 2011

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BiFeO 3 (BFO) thin films have been deposited on SrRuO 3 /SrTiO 3 (001) substrate by using ion beam sputtering process. At low oxygen partial pressure of 11 m Pa, rhombohedral and large c/a mixed phase thin film have been obtained in spite of rhombohedral BFO single phase formation at high oxygen partial pressure of 73 mPa. From wide area 2 -mappings, diffraction peaks from large c/a phase BFO thin film were obtained with the same extinction rule as those of rhombohedral BFO. Reciprocal space mappings around BFO (003) and BFO (103) spots indicate that lattice parameters of large c/a phase BFO were a = 0.381 nm and c = 0.461 nm (c/a =1.22), respectively. Moreover ferroelectric domain switching could be observed in both of rhombohedral BFO and mixed phase BFO thin films.

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Characterization of epitaxial BiFeO3 thin films prepared by ion beam sputtering

Cited by 9 publications

References 27 publications

Influence of Lattice Distortion Induced by a Vicinal SrTiO₃(001) Substrate in Single-Domain BiFeO₃ Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Influence of Lattice Distortion Induced by a Vicinal SrTiO₃(001) Substrate in Single-Domain BiFeO₃ Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Growth and local structure of BiFeO₃thin films with giant tetragonality on SrRuO₃-buffered SrTiO₃(001) substrate by ion beam sputtering

Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

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Characterization of epitaxial BiFeO3 thin films prepared by ion beam sputtering

Cited by 9 publications

References 27 publications

Influence of Lattice Distortion Induced by a Vicinal SrTiO3(001) Substrate in Single-Domain BiFeO3 Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Influence of Lattice Distortion Induced by a Vicinal SrTiO3(001) Substrate in Single-Domain BiFeO3 Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Growth and local structure of BiFeO3thin films with giant tetragonality on SrRuO3-buffered SrTiO3(001) substrate by ion beam sputtering

Structural and Ferroelectric Properties of Large c/a Phase Bismuth Ferrite Thin Films Prepared by Ion Beam Sputtering

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Influence of Lattice Distortion Induced by a Vicinal SrTiO₃(001) Substrate in Single-Domain BiFeO₃ Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Influence of Lattice Distortion Induced by a Vicinal SrTiO₃(001) Substrate in Single-Domain BiFeO₃ Thin Films Prepared by Radio Frequency Planar Magnetron Sputtering

Growth and local structure of BiFeO₃thin films with giant tetragonality on SrRuO₃-buffered SrTiO₃(001) substrate by ion beam sputtering