BiFeO3 (BFO) thin films have been grown on vicinal SrTiO3 (STO) (001) substrates by dual-ion-beam sputtering. The Bi/Fe composition ratio was optimized by adjusting the beam current ratio of a dual-ion beam. The domain structure was controlled using a vicinal STO substrate along <100> and <110>. From the results of X-ray diffraction analysis and piezoelectric force microscopy, it is found that BFO thin films grown on vicinal STO along <100> and <110> show stripe and single-domain structures, respectively. It is found that the reduction in the length of non-180° domain walls improves leakage current characteristics, resulting in an enhancement of ferroelectric D–E characteristics. The single-domain BFO thin film shows excellent D–E hysteresis loops at room temperature, with a double remanent polarization (2P
r) and a double coercive field (2E
c) of 140 µC/cm2 and 340 kV/cm, respectively.
A practical sample preparation procedure for electron beam (EB) testing using reactive ion etching (RIE) has been developed. By highly accurate anisotropic dry etching, metal wires below dielectric layers can be exposed while successfully maintaining the electrical performance of the LSI. Applying this technique to actual EB tester analysis on specimens with multi-layer metal lines, clear voltage contrast images can be obtained. This preparation procedure greatly reduces the difficulties of acquiring EB contrast images and enables effective failure analysis with fast TAT.
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