Growth of high quality BiFeO&lt;inf&gt;3&lt;/inf&gt; thin films by dual ion beam sputtering

Nakashima, Seiji; Tsujita, Yosuke; Seto, Syota; Fujisawa, Hironori; Nishioka, Hiroshi; Kobune, Masafumi; Shimizu, Masaru; Park, Jung Min; Kanashima, Takeshi; Okuyama, Masanori

doi:10.1109/isaf.2011.6014140

Cited by 2 publications

(3 citation statements)

References 9 publications

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“…In addition, each BFO crystallite on each STO crystal has a single crystalline nature, similar to those on vicinal STO single crystals along [110]. 27,28) These XRD results suggest that BFO follows the bicrystal nature of the STO substrate, and that the crystallinity of each BFO crystallite is comparable to those grown on STO single crystals.…”

Section: Resultsmentioning

confidence: 84%

“…The epitaxial growth of BFO thin films prepared by sputtering has already been described in detail elsewhere. [26][27][28][29] Square Pt top electrodes (50 × 50 µm 2 ) were prepared on and off the boundary by sputtering and a lift-off process via electron beam lithography. The orientation and domain structure of BFO thin films were characterized by θ-2θ X-ray diffraction (XRD) measurement and reciprocal space mapping (RSM) using four circle X-ray diffractometers (PANalytical X'Pert MRD and Rigaku Smart Lab), and piezoresponse scanning force microscopy (PFM).…”

Section: Experimental Methodsmentioning

confidence: 99%

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Introduction of an artificial domain wall into BiFeO₃thin film using SrTiO₃bicrystal substrate

Fujisawa

Seto

Nakashima

et al. 2015

Jpn. J. Appl. Phys.

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For the future realization of nanoelectronic devices using domain walls (DWs) in ferroelectric thin films as a functional element, the artificial introduction and position control of DWs in BiFeO 3 (BFO) thin films using SrTiO 3 bicrystal substrates are demonstrated. The BFO thin film follows the bicrystal nature of SrTiO 3 , and consequently the boundary with an out-of-plane misorientation angle of 8°is formed immediately above that of the substrate. The boundary shows a charged nature induced by a head-to-head polarization configuration. The BFO bicrystal film exhibits a wellsaturated polarization hysteresis loop equivalent to those of single-crystalline films. The piezoresponse scanning force microscopy of polarization switching suggests ferroelastic relaxation-mediated 180°switching through 71°switching. Although the boundary corresponds to a low-angle symmetry boundary with misfit dislocations, experimental results show that it behaves just like normal DWs by crystallographic twinning. Therefore, it is concluded that the artificially introduced boundary can be considered as a charged 101°DW.

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Section: Resultsmentioning

confidence: 84%

Section: Experimental Methodsmentioning

confidence: 99%

Introduction of an artificial domain wall into BiFeO₃thin film using SrTiO₃bicrystal substrate

Fujisawa

Seto

Nakashima

et al. 2015

Jpn. J. Appl. Phys.

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“…Details of the epitaxial growth, domain structures, and electrical properties of (001)-BFO thin films prepared by sputtering have already been described elsewhere. [29][30][31][32][33] The domain structures of BFO thin films were determined by X-ray diffraction reciprocal space mapping (XRD-RSM), lateral piezoresponse force microscopy (LPFM), vertical PFM (VPFM) and SNDM. XRD-RSM was performed using a four-circle X-ray diffractometer with Cu K¡ radiation (PANalytical X'pert MRD).…”

Section: Experimental Methodsmentioning

confidence: 99%

Thicknesses of domain walls in rhombohedral BiFeO₃thin films evaluated by scanning nonlinear dielectric microscopy

Fujisawa¹,

Seto²,

Nakashima³

et al. 2014

Jpn. J. Appl. Phys.

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We evaluated the thicknesses of domain walls (DWs) in rhombohedral BiFeO 3 thin films epitaxially grown on SrRuO 3 -covered SrTiO 3 (100), (110), and (111) single crystals by scanning nonlinear dielectric microscopy (SNDM). The SNDM phase signal revealed an abrupt change in the sign of polarization components normal to the surface at DWs within one or two unit cells. On the other hand, the SNDM amplitude signals gradually changed across DWs, corresponding to the change in the electrostatic potential. The minimum thicknesses estimated from the SNDM amplitude signals are 4, 1, and 2 nm for 71, 109, and 180°DWs, respectively. The relationship between these DW thicknesses and the nature and situation of DWs is discussed taking account of the polarization configuration in adjacent domains.

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Growth of high quality BiFeO<inf>3</inf> thin films by dual ion beam sputtering

Cited by 2 publications

References 9 publications

Introduction of an artificial domain wall into BiFeO₃thin film using SrTiO₃bicrystal substrate

Introduction of an artificial domain wall into BiFeO₃thin film using SrTiO₃bicrystal substrate

Thicknesses of domain walls in rhombohedral BiFeO₃thin films evaluated by scanning nonlinear dielectric microscopy

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Growth of high quality BiFeO<inf>3</inf> thin films by dual ion beam sputtering

Cited by 2 publications

References 9 publications

Introduction of an artificial domain wall into BiFeO3thin film using SrTiO3bicrystal substrate

Introduction of an artificial domain wall into BiFeO3thin film using SrTiO3bicrystal substrate

Thicknesses of domain walls in rhombohedral BiFeO3thin films evaluated by scanning nonlinear dielectric microscopy

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Introduction of an artificial domain wall into BiFeO₃thin film using SrTiO₃bicrystal substrate

Introduction of an artificial domain wall into BiFeO₃thin film using SrTiO₃bicrystal substrate

Thicknesses of domain walls in rhombohedral BiFeO₃thin films evaluated by scanning nonlinear dielectric microscopy