Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors

Kim, Jae Hyun; Yong, Kijung

doi:10.1016/j.jcrysgro.2003.12.009

Cited by 34 publications

(29 citation statements)

References 15 publications

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“…It has been reported that hafnia or zirconia is phase separated from silicates by thermal annealing at temperatures above 800°C for hafnium silicate and above 900°C for zirconium silicate. [28][29][30] This should reduce the intensity of the PL peculiar to silicates. Therefore, by assuming that the phase separation also occurred in HSA37 and ZSA15, the decrease in intensity for PLs ␥ HS and ␥ ZS by the thermal annealing can be explained.…”

Section: Resultsmentioning

confidence: 99%

Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons

Ito

Kato

Ohki

2006

Journal of Applied Physics

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Two photoluminescence (PL) components with peaks around 2.8–3.0 and 3.8eV were induced in hafnium silicates by the irradiation of synchrotron radiation photons at 8.0eV, while two similar ones were induced in zirconium silicates around 2.7–3.0 and 3.8eV. By examining PL excitation spectra, PL decay characteristics, and vacuum-ultraviolet absorption spectra, it is assumed that the origin of the PL component around 2.7(2.8)–3.0eV is the same as that of the PL component around 2.7–2.9eV observed in hafnia and zirconia. In the band gaps of hafnium silicates, zirconium silicates, hafnia, and zirconia, luminescent centers responsible for the PL components around 2.7(2.8)–2.9(3.0)eV have their respective upper and lower states with a certain constant energy difference that does not change by the hafnium or zirconium content. Electrons (or holes) excited by ultraviolet photons to tail states at the band edges first relax to the upper state of the luminescent centers, and then they are deexcited to the lower state, which induces the PL components.

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Section: Resultsmentioning

confidence: 99%

Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons

Ito

Kato

Ohki

2006

Journal of Applied Physics

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“…16͒ and comparable to Hf silicates. 17 It is, however, lower than for DyScO 3 and GdScO 3 . 10 Figure 3 shows the capacitance normalized to the gate area versus gate voltage for SmScO 3 films with different thicknesses.…”

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confidence: 82%

SmScO 3 thin films as an alternative gate dielectric

Özben

Lopes

Roeckerath

et al. 2008

Applied Physics Letters

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Samarium scandate thin films deposited on (100) Si have been investigated structurally and electrically. Rutherford backscattering spectrometry and transmission electron microscopy results show that the films are stoichiometric, amorphous, and smooth. X-ray diffraction analysis indicates that SmScO3 starts to crystallize at 900 °C. Capacitance and leakage current measurements reveal C-V curves with negligible hysteresis, a dielectric constant around 29 for 6 nm thick films, low leakage current densities in the range of 10−7 A/cm2, an effective oxide charge density of ∼5×1011 cm−2, and an interface trap density of 4.5×1011 (eV cm2)−1.

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“…For example, silicon is introduced into HfO 2 films in order to improve the thermodynamic stability of HfO 2 in direct contact with silicon [8,9]. It is well known that hafnium silicate (HfSi x O y ) can avoid the formation of the low-κ interfacial oxide layer due to a high resistivity to oxygen diffusion [3,10,11]. Also, the formation of hafnium silicate helps stabilize an amorphous structure during high temperature annealing with enhanced interface carrier mobility [10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…It is well known that hafnium silicate (HfSi x O y ) can avoid the formation of the low-κ interfacial oxide layer due to a high resistivity to oxygen diffusion [3,10,11]. Also, the formation of hafnium silicate helps stabilize an amorphous structure during high temperature annealing with enhanced interface carrier mobility [10][11][12][13][14]. Although the overall permittivity of the hafnium silicate film is inevitably lower than that of the pure HfO 2 , this trade-off can be accepted to a certain extent for the improved stability.…”

Section: Introductionmentioning

confidence: 99%

Initial surface reactions in atomic layer deposition of HfSixOy and HfO2: A comparative study by density functional theory

Ren

Jiang

et al. 2008

Thin Solid Films

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Characterization of hafnium silicate thin films grown by MOCVD using a new combination of precursors

Cited by 34 publications

References 15 publications

Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons

Mechanisms of several photoluminescence bands in hafnium and zirconium silicates induced by ultraviolet photons

SmScO 3 thin films as an alternative gate dielectric

Initial surface reactions in atomic layer deposition of HfSixOy and HfO2: A comparative study by density functional theory

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