Characterization of intrinsic and impurity deep levels in ZnSe and ZnO crystals by nonlinear spectroscopy

Anomalous Stress-Induced Hump Effects in Amorphous Indium Gallium Zinc Oxide TFTs

“…Therefore, the electrical characteristics of a-IGZO TFTs were affected significantly by the density of these point defects, which will be determined by the process and ambient. Among these point defects, it was well known that the free electrons mainly originated from oxygen vacancies, the thermally excited oxygen atoms leaving free carriers at sites [13][14][15]. While these intrinsic oxygen vacancies were stable, there were also metastable point defects consisting of mobile positively charged zinc interstitial ions.…”

Role of defects in ferromagnetism inZn1−xCoxO: A hybrid density-functional study

“…Thermodynamic arguments, 36 to be 1.0, 55 2.4, 36 or 3.3 eV ͑this work͒ below the CBM; a nonlinear spectroscopy study 61 found this level to lie 2.1 eV below the CBM.…”

“…The Zn i interstitial is known to be a shallow donor and estimates 27,33,[61][62][63] of the position of the donor level range between 30 meV ͑Ref. 33͒ and 200 meV ͑Ref.…”

Surface passivation effect by fluorine plasma treatment on ZnO for efficiency and lifetime improvement of inverted polymer solar cells

“…62,63 The V O energy states are partially occupied and are typically located at about 0.8-1.0 eV below the bottom of the conduction band, 64,65 acting thus as trap states for the photogenerated charge (especially for the photogenerated holes, as will be discussed below) leading to higher recombination rates. 66 After surface treatment with a mild (in order to avoid etching of the ZnO surface) SF 6 plasma for 5 min (the optimized plasma process conditions in order to obtained best device performance are described in the experimental section) it is found that visible (defect) emission is significantly suppressed while the NBE is greatly enhanced compared to that of the as-grown…”